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International Rectifier Electronic Components Datasheet

IRS2011PBF Datasheet

HIGH AND LOW SIDE DRIVER

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Data Sheet No.PD60221
IRS2011(S)PbF
Features
HIGH AND LOW SIDE DRIVER
Floating channel designed for bootstrap operation Product Summary
Fully operational up to +200 V
Tolerant to negative transient voltage, dV/dt immune
VOFFSET
200 V max.
Gate drive supply range from 10 V to 20 V
Independent low-side and high-side channels
Input logic HIN/LIN active high
IO+/-
1.0 A /1.0 A typ.
Undervoltage lockout for both channels
3.3 V and 5 V input logic compatible
VOUT
10 V - 20 V
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
ton/off
60 ns typ.
RoHS compliant
Applications
Delay Matching 20 ns max.
Audio Class D amplifiers
High power DC-DC SMPS converters
DC motor drive
Packages
Description
The IRS2011 is a high power, high speed power MOSFET
driver with independent high and low-side referenced output
channels, ideal for Audio Class D and DC-DC converter appli-
IRS2011
IRS2011S
cations. Logic inputs are compatible with standard CMOS or
8-Lead PDIP
8-Lead SOIC
LSTTL output, down to 3.3 V logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The floating channel can be used to drive an N-
channel power MOSFET in the high-side configuration which operates up to 200 V. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized monolithic construction.
Typical Connection
200 V
HIN
LIN
COM
5
HIN
LIN
COM
8 LO
VS 4
HO
VB
1
VCC
TO
LOAD
VCC
(Refer to Lead Assignments for correct configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
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1


International Rectifier Electronic Components Datasheet

IRS2011PBF Datasheet

HIGH AND LOW SIDE DRIVER

No Preview Available !

IRS2011(S)PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
VB
VS
VHO
VCC
VLO
VIN
dVs/dt
PD
RTHJA
TJ
TS
TL
Definition
High-side floating supply voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side fixed supply voltage
Low-side output voltage
Logic input voltage (HIN & LIN)
Allowable offset supply voltage transient (Fig. 2)
(8-lead DIP)
Package power dissipation @ TA = +25 °C
(8-lead SOIC)
Thermal resistance, junction to ambient
(8-lead DIP)
(8-lead SOIC)
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
VB - 20
VS - 0.3
-0.3
-0.3
-0.3
-55
Max.
220 (Note 1)
VB + 0.3
VB + 0.3
20 (Note 1)
VCC +0.3
VCC +0.3
50
1.0
0.625
125
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Note 1: All supplies are fully tested at 25 V and an internal 20 V clamp exists for each supply.
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The VS and COM offset ratings
are tested with all supplies biased at a 15 V differential.
Symbol
VB
VS
VHO
VCC
VLO
VIN
TA
Definition
High-side floating supply absolute voltage
High-side floating supply offset voltage
High-side floating output voltage
Low-side fixed supply voltage
Low-side output voltage
Logic input voltage (HIN & LIN)
Ambient temperature
Min.
VS + 10
Note 2
VS
10
0
COM
-40
Note 2: Logic operational for VS of -5 V to +200 V. Logic state held for VS of -5 V to -VBS.
Max.
VS + 20
200
VB
20
VCC
5.5
125
Units
V
°C
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Part Number IRS2011PBF
Description HIGH AND LOW SIDE DRIVER
Maker International Rectifier
Total Page 19 Pages
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