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International Rectifier Electronic Components Datasheet

IRS2011PBF Datasheet

High and Low Side Driver

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Data Sheet No.PD60221 revA
IRS2011(S) & PbF
HIGH AND LOW SIDE DRIVER
Features
Product Summary
Floating channel designed for bootstrap operation
Fully operational up to +200V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10V to 20V
Independent low and high side channels
Input logic HIN/LIN active high
Undervoltage lockout for both channels
3.3V and 5V input logic compatible
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Applications
VOFFSET
IO+/-
VOUT
ton/off
Delay Matching
200V max.
1.0A /1.0A typ.
10 - 20V
60 ns typ.
20 ns max.
Audio Class D amplifiers
High power DC-DC SMPS converters
Other high frequency applications
Packages
Description
The IRS2011 is a high power, high speed power MOSFET
driver with independent high and low side referenced output
channels, ideal for Audio Class D and DC-DC converter appli-
IRS2011
IRS2011S
cations. Logic inputs are compatible with standard CMOS or
8-Lead PDIP
8-Lead SOIC
LSTTL output, down to 3.0V logic. The output drivers feature a
high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are
matched to simplify use in high frequency applications. The floating channel can be used to drive an N-
channel power MOSFET in the high side configuration which operates up to 200 volts. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction.
Typical Connection
200V
HIN
LIN
COM
5
HIN
LIN
COM
8 LO
4
VS
HO
VB
1
VCC
TO
LOAD
VCC
(Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
www.irf.com
1


International Rectifier Electronic Components Datasheet

IRS2011PBF Datasheet

High and Low Side Driver

No Preview Available !

www.DataSheet4U.com
IRS2011(S) & PbF
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
Min.
Max. Units
VB
VS
VHO
VCC
VLO
VIN
dVs/dt
PD
RTHJA
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side fixed supply voltage
Low side output voltage
Logic input voltage (HIN & LIN)
Allowable offset supply voltage transient (figure 2)
Package power dissipation @ TA = +25°C
(8-lead DIP)
(8-lead SOIC)
Thermal resistance, junction to ambient
(8-lead DIP)
(8-lead SOIC)
-0.3
VB - 20
VS - 0.3
-0.3
-0.3
-0.3
220
VB + 0.3
VB + 0.3
20
VCC +0.3
VCC +0.3
50
1.0
0.625
125
200
V
V/ns
W
°C/W
TJ Junction temperature
TS Storage temperature
TL Lead temperature (soldering, 10 seconds)
— 150
-55 150 °C
— 300
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. The VS and COM offset ratings
are tested with all supplies biased at 15V differential.
Symbol
VB
VS
VHO
VCC
VLO
VIN
TA
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side fixed supply voltage
Low side output voltage
Logic input voltage (HIN & LIN)
Ambient temperature
Min.
VS + 10
Note 1
VS
10
0
COM
-40
Note 1: Logic operational for VS of -8V to +200V. Logic state held for VS of -8V to -VBS.
Max.
VS + 20
200
VB
20
VCC
5.5
125
Units
V
°C
2 www.irf.com


Part Number IRS2011PBF
Description High and Low Side Driver
Maker International Rectifier
Total Page 17 Pages
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International Rectifier
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