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IRS2608DSPBF - High Speed Power MOSFET And IGBT Driver

General Description

The IRS2608D(S) is a high voltage, high speed power MOSFET an IGBT driver with dependent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Key Features

  • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage.
  • dV/dt immune www. DataSheet4U. com.
  • Gate drive supply range from 10 V to 20 V.
  • Undervoltage lockout for both channels.
  • 3.3 V, 5 V and 15 V input logic compatible.
  • Cross-conduction prevention logic.
  • Matched propagation delay for both channels.
  • High side output in phase with HIN input.
  • Low side output out of phas.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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June 18, 2008 IRS2608DSPbF HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage – dV/dt immune www.DataSheet4U.com • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels • 3.