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International Rectifier Electronic Components Datasheet

IRSM005-301MH Datasheet

Half-Bridge IPM

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IRSM005-301MH
Half-Bridge IPM for Low Voltage
Applications
30A, 100V
Description
The IRSM005-301MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm
PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where
power density is of critical importance. Typical examples would be advanced motor drives, dc-to-ac and dc-
to-dc converters.
Features
Package with low thermal resistance and minimal parasitics
Low on-resistance HEXFETs: 16 mtyp.
Undervoltage lockout on Vcc and Vbs
Independent gate drive in phase with logic input
Gate drive supply range from 10V to 20V
Propagation delay matched to defined spec
3.3V, 5V and 15V logic input compatible
RoHS compliant
Internal Electrical Schematic
Ordering Information
Orderable Part Number
IRSM005-301MH
IRSM005-301MHTR
Package Type
PQFN 7x8mm
PQFN 7x8mm
1 www.irf.com © 2014 International Rectifier
Form
Tray
Tape and Reel
Quantity
1300
2000
March 18, 2014


International Rectifier Electronic Components Datasheet

IRSM005-301MH Datasheet

Half-Bridge IPM

No Preview Available !

IRSM005-301MH
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are
not tested at manufacturing. All voltage parameters are absolute voltages referenced to VSS unless otherwise
stated in the table. The thermal resistance rating is measured under board mounted and still air conditions.
Symbol
Description
VDS MOSFET Drain-to-Source Voltage
IO Maximum DC current per MOSFET @ TC=25°C (Note1)
Pd Maximum Power dissipation per MOSFET @ TC =100°C
TJ (MOSFET & IC) Maximum Operating Junction Temperature
TS Storage Temperature Range
VB High side floating supply voltage
VS High side floating supply offset voltage
VCC Low Side fixed supply voltage
VIN Logic input voltage LIN, HIN
Note1: Calculated based on maximum junction temperature. Bond wires current limit is 20A
Min
---
---
---
---
-40
-0.3
VB - 20
-0.3
-0.3
Max
100
30
13.5
150
150
VS + 20
VB +0.3
20
VCC+0.3V
Unit
V
A
W
°C
°C
V
V
V
V
Inverter Static Electrical Characteristics
VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified.
Symbol
Description
Min Typ Max Units Conditions
V(BR)DSS
VGS(TH)
RDS(ON)
IDSS
VSD
IGSS
RBSOA
QG
QGS
QGD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Drain-to-Source Voltage
Zero Gate Voltage Drain Current
MOSFET Diode Forward Voltage
Drop
Gate to Source leakage
Reverse Bias Safe Operating Area
Total gate charge
Gate to source charge
Gate to drain charge
100 ---
--- V
2.0 3.0 4.0 V
--- 16 21
mΩ
--- 35 ---
--- 20 ---
µA
--- 250 ---
-- 0.7 0.82
V
--- 0.6 ---
--- --- +/-100 nA
FULL SQUARE, limited by TJmax
--- 36 54
--- 7 --- nC
--- 11 ---
HIN=LIN=0V, ID=250µA
ID=100µA
ID=10A, TJ=25°C
ID=10A, TJ=150°C
HIN=LIN=0V, V+=100V
HIN=LIN=0V, V+=100V,
TJ=125°C
IF=10A
IF=10A, TJ=125°C
VGS=+/-20V
V+= 100V,
VCC=+15V to 0V
ID =26A
VDS = 20V
VGS=10V
EAS
Single Pulse Avalanche Energy
6.1 -
mJ
2 www.irf.com © 2014 International Rectifier
March 18, 2014


Part Number IRSM005-301MH
Description Half-Bridge IPM
Maker International Rectifier
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IRSM005-301MH Datasheet PDF






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