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International Rectifier Electronic Components Datasheet

IRSM005-800MH Datasheet

Half-Bridge IPM

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IRSM005-800MH
Half-Bridge IPM for Low Voltage
Applications
80A, 40V
Description
The IRSM005-800MH is a general purpose half-bridge with integrated gate driver in an attractive 7x8mm
PQFN package. It is a general purpose building block suitable for a variety of low voltage applications where
power density is of critical importance. Typical examples would be advanced motor drives, dc-to-ac and dc-
to-dc converters.
Features
Package with low thermal resistance and minimal parasitics
Low on-resistance HEXFETs: 2.7 mtyp.
Undervoltage lockout on logic supply
Independent gate drive in phase with logic input
Gate drive supply range from 10V to 20V
Propagation delay matched to defined spec
3.3V, 5V and 15V logic input compatible
RoHS compliant
Internal Electrical Schematic
Ordering Information
Orderable Part Number
IRSM005800MH
IRSM005800MHTR
Package Type
PQFN 7x8mm
PQFN 7x8mm
1 www.irf.com © 2014 International Rectifier
Form
Tray
Tape and Reel
Quantity
1300
2000
March 19, 2014


International Rectifier Electronic Components Datasheet

IRSM005-800MH Datasheet

Half-Bridge IPM

No Preview Available !

IRSM005-800MH
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are
not tested at manufacturing. All voltage parameters are absolute voltages referenced to VSS unless otherwise
stated in the table. The thermal resistance rating is measured under board mounted and still air conditions.
Symbol
Description
VDS MOSFET Drain-to-Source Voltage
Io Maximum DC current per MOSFET @ TC=25°C (Note1)
Pd Maximum Power dissipation per MOSFET @ TC =100°C
TJ (MOSFET & IC) Maximum Operating Junction Temperature
TS Storage Temperature Range
VGS Gate to Source voltage
VB High side floating absolute supply voltage
VS High side floating supply offset voltage
VCC Low Side fixed supply voltage
VLO Low side output voltage
VHO High side output voltage
VIN Logic input voltage LIN, HIN
Note1: Calculated based on maximum junction temperature. Bond wires current limit is 49A
Inverter Static Electrical Characteristics
VBIAS (VCC, VBS)=15V, TJ=25ºC, unless otherwise specified.
Min Max
--- 40
--- 80
--- 13
--- 150
-40 150
+/- 20
-0.3 225
VB - 20
-0.3
VB + 0.3
25
-0.3 VCC +0.3V
-0.3 VCC +0.3V
-0.3 VCC +0.3V
Unit
V
A
W
°C
°C
V
Symbol
Description
Min Typ Max Units Conditions
V(BR)DSS
VGS(TH)
RDS(ON)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Drain-to-Source Voltage
IDSS Zero Gate Voltage Drain Current
Gate to Source Forward Leakage
IGSS
Gate to Source Reverse Leakage
RG Internal Gate Resistance
VSD Mosfet Diode Forward Voltage Drop
RBSOA
Io @ TA=60°C
Io @ TA=60°C
EAS
Reverse Bias Safe Operating Area
RMS Phase Current, sinusoidal
modulation, 5kHz
RMS Phase Current, sinusoidal
modulation, 20kHz
Single Pulse Avalanche Energy
40 --- --- V
2 --- 4 V
--- 2.7 5.0
mΩ
--- 4.2
--- 20
µA
--- --- 150
--- --- 100
nA
--- --- -100
--- 1.5 --- Ω
--- 0.8 0.9
V
--- 0.55
FULL SQUARE, limited by TJmax
--- 13.5 --- ARMS
--- 6 --- ARMS
HIN=LIN=0V, ID=250µA
ID=100µA
ID=10A, TJ=25°C
ID=10A, TJ=150°C
HIN=LIN=0V, V+=40V
HIN=LIN=0V, V+=40V,
TJ=125°C
VGS=20V
VGS=-20V
IF=10A
IF=10A, TJ=150°C
V+= 40V,
VCC=+15V to 0V
V+=32V, TJ=125°C, MI=1,
PF=0.8, typical board
mount. See Figure 2.
9.2 ---
--- mJ
2 www.irf.com © 2014 International Rectifier
March 19, 2014


Part Number IRSM005-800MH
Description Half-Bridge IPM
Maker International Rectifier
Total Page 14 Pages
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