Datasheet4U Logo Datasheet4U.com

JANSR2N7471T1 - RADIATION HARDENED POWER MOSFET

📥 Download Datasheet

Overview

PD-95889D IRHMS57160 RADIATION HARDENED JANSR2N7471T1 POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/698 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57160 100K Rads (Si) 0.013Ω 45A* JANSR2N7471T1 IRHMS53160 300K Rads (Si) 0.013Ω 45A* JANSF2N7471T1 IRHMS54160 500K Rads (Si) 0.013Ω 45A* JANSG2N7471T1 IRHMS58160 1000K Rads (Si) 0.014Ω 45A* JANSH2N7471T1 Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

Key Features

  • n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Units.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
JANSR2N7470T1 RADIATION HARDENED POWER MOSFET
JANSR2N7475T1 RADIATION HARDENED POWER MOSFET
JANSR2N7476T1 RADIATION HARDENED POWER MOSFET
JANSR2N7477T1 RADIATION HARDENED POWER MOSFET
JANSR2N7478T1 RADIATION HARDENED POWER MOSFET
JANSR2N7425 POWER MOSFET
JANSR2N7432 Radiation Hardened Power MOSFET
JANSR2N7489T3 RADIATION HARDENED POWER MOSFET
JANSR2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
JANSR2N7262 Radiation Hardened Power MOSFET