JANSR2N7476T1 - RADIATION HARDENED POWER MOSFET

International Rectifier (now Infineon)

Datasheet Details

Part number	JANSR2N7476T1
Manufacturer	International Rectifier (now Infineon)
File Size	181.11 KB
Description	RADIATION HARDENED POWER MOSFET
Datasheet	JANSR2N7476T1 Datasheet

Overview

PD - 94765 IRHMS57260SE RADIATION HARDENED JANSR2N7476T1 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/685 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57260SE 100K Rads (Si) 0.044Ω 45A JANSR2N7476T1 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.

These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).

The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.

Key Features

n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor Units 45 29 A 180 208 W.

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