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International Rectifier Electronic Components Datasheet

JANSR2N7626UB Datasheet

P-CHANNEL POWER MOSFET

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PD-94764O
IRHLUB7970Z4
JANSR2N7626UB
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level
IRHLUB7970Z4 100 kRads(Si)
IRHLUB7930Z4 300 kRads(Si)
RDS(on)
1.4
1.4
ID
-0.53A
-0.53A
QPL Part Number
JANSR2N7626UB
JANSF2N7626UB
Refer to Page 10 for 3 Additional Part Numbers -
IRHLUBN7970Z4, IRHLUBC7970Z4, IRHLUBCN7970Z4
60V, P-CHANNEL
REF: MIL-PRF-19500/745
R7 TECHNOLOGY
UB
(SHIELDED METAL LID)
Description
IR HiRel R7 Logic Level Power MOSFETs provide simple
solution to interfacing CMOS and TTL control circuits to
power devices in space and other radiation environments.
The threshold voltage remains within acceptable operating
limits over the full operating temperature and post
radiation. This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices are used in applications such as current
boost low signal source in PWM, voltage comparator and
operational amplifiers.
Features
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Surface Mount
Light Weight
Complementary N-Channel Available-
IRHLUB770Z4, IRHLUBN770Z4
IRHLUBC770Z4, IRHLUBCN770Z4
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = -4.5V, TC = 25°C
Continuous Drain Current
ID2 @ VGS = -4.5V, TC = 100°C
IDM @TC = 25°C
Continuous Drain Current
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
Value
-0.53
-0.33
-2.12
0.57
0.0045
± 10
33.5
-0.53
0.06
-4.4
-55 to + 150
300 (for 5s)
43 (Typical)
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
mg
2021-04-26


International Rectifier Electronic Components Datasheet

JANSR2N7626UB Datasheet

P-CHANNEL POWER MOSFET

No Preview Available !

IRHLUB7970Z4
JANSR2N7626UB
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Gfs
IDSS
IGSS
QG
QGS
QGD
td(on)
Tr
td(off)
tf
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min. Typ. Max.
-60 ––– –––
––– -0.055 –––
––– ––– 1.40
-1.0 ––– -2.0
––– 3.1 –––
0.8 ––– –––
––– ––– -1.0
––– ––– -10
––– ––– -100
––– ––– 100
––– ––– 3.6
––– ––– 1.5
––– ––– 1.8
––– ––– 22
––– ––– 22
––– ––– 27
––– ––– 27
Units
V
V/°C
V
mV/°C
S
µA
nA
nC
ns
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
VGS = -4.5V, ID2 = -0.33A
VDS = VGS, ID = -250µA
VDS = -10V, ID2 = -0.33A
VDS = -48V, VGS = 0V
VDS = -48V,VGS = 0V,TJ =125°C
VGS = -10V
VGS = 10V
ID1 = -0.53A
VDS = -30V
VGS = -4.5V
VDD = -30V
ID1 = -0.53A
RG = 24
VGS = -5.0V
Ls +LD
Total Inductance
––– 8.4 –––
nH
Measured from center of Drain
pad to center of source pad
Ciss
Input Capacitance
––– 167 –––
VGS = 0V
Coss
Output Capacitance
––– 43 ––– pF VDS = -25V
Crss
Reverse Transfer Capacitance
––– 10 –––
ƒ = 100KHz
RG
Gate Resistance
––– 56 ––– ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode) ––– ––– -0.53
A
ISM
Pulsed Source Current (Body Diode) ––– ––– -2.12
VSD
Diode Forward Voltage
––– ––– -5.0 V TJ =25°C,IS =-0.53A, VGS =0V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
––– ––– 50
––– ––– 25
ns TJ = 25°C, IF = -0.53A,
nC VDD 25V ,di/dt = -100A/µs
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Symbol
Parameter
RJA
Junction-to-Ambient
RJL
Junction-to-Lead
Min.
–––
–––
Typ.
–––
–––
Max.
220
40
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25°C, L =238mH, Peak IL = -0.53A, VGS = -10V
ISD -0.53A, di/dt -100A/µs, VDD -60V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Total Dose Irradiation with VGS Bias. -10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with VDS Bias. -48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2021-04-26


Part Number JANSR2N7626UB
Description P-CHANNEL POWER MOSFET
Maker International Rectifier
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