JANSR2N7647U3CE Overview
IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 88.6 MeV·cm2/mg. Their bination of low RDS(on) and faster switching times reduces the power losses and increases power density in today’s high speed switching applications such as...
JANSR2N7647U3CE Key Features
- Low RDS(on)
- Fast switching
- Single event effect (SEE) hardened
- Low total gate charge
- Simple drive requirements
- Hermetically sealed
- Ceramic package
- Light weight
- Surface mount
- ESD rating: class 2 per MIL-STD-750, Method 1020