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International Rectifier Electronic Components Datasheet

JANTX2N7222 Datasheet

POWER MOSFET

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PD - 90492D
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on)
IRFM440
0.85
ID
8.0A
IRFM440
JANTX2N7222
JANTXV2N7222
REF:MIL-PRF-19500/596
500V, N-CHANNEL
HEXFET® MOSFETTECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Units
8.0
5.0 A
32
125 W
1.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
700
8.0
12.5
3.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
2/6/02


International Rectifier Electronic Components Datasheet

JANTX2N7222 Datasheet

POWER MOSFET

No Preview Available !

IRFM440
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
500
2.0
4.7
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
—— V
0.78 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.85
— 0.95
— 4.0 V
— — S( )
25
250
µA
— 100
— -100 nA
— 68.5
— 12.5 nC
— 42.4
VGS = 10V, ID = 5.0A
VGS = 10V, ID = 8.0A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 5.0A
VDS= 400V ,VGS=0V
VDS = 400V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 8.0A
VDS =250V
— 21
— 73
— 72 ns
VDD = 250V, ID = 8.0A,
VGS =10V, RG = 9.1
— 51
6.8 — nH Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
1300
310
120
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
8.0
32
A
VSD Diode Forward Voltage
— — 1.5 V
trr Reverse Recovery Time
— — 700 nS
QRR Reverse Recovery Charge
— — 8.9 µC
Tj = 25°C, IS = 8.0A, VGS = 0V
Tj = 25°C, IF = 8.0A, di/dt 100A/µs
VDD 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
— — 1.0
— 0.21 —
— — 48
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com


Part Number JANTX2N7222
Description POWER MOSFET
Maker International Rectifier
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JANTX2N7222 Datasheet PDF





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