POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on)
IRFM250
0.100 Ω
ID
27.4A
PD-90554F
IRFM250
JANTX2N7225
JANTXV2N7225
REF:MIL-PRF-19500/592
200V, N-CHANNEL
HEXFET® MOSFET TECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
27.4
17
110
150
1.2
±20
500
27.4
15
5.0
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/25/11
