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International Rectifier Electronic Components Datasheet

JANTX2N7225 Datasheet

POWER MOSFET

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POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on)
IRFM250
0.100
ID
27.4A
PD-90554F
IRFM250
JANTX2N7225
JANTXV2N7225
REF:MIL-PRF-19500/592
200V, N-CHANNEL
HEXFET® MOSFET TECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
27.4
17
110
150
1.2
±20
500
27.4
15
5.0
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/25/11


International Rectifier Electronic Components Datasheet

JANTX2N7225 Datasheet

POWER MOSFET

No Preview Available !

IRFM250
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
2.0
9.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
CDC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Case Capacitance
Typ Max Units
——
V
0.28 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.100
— 0.105
— 4.0
——
— 25
— 250
— 100
— -100
— 115
— 22
— 60
— 35
— 190
— 170
— 130
6.8 —
3500
700
110
12
VGS = 10V, ID = 17A
VGS = 10V, ID = 27.4A
Ã
V VDS = VGS, ID = 250µA
S VDS = 15V, IDS = 17A Ã
µA
VDS= 160V ,VGS = 0V
VDS = 160V,
VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
VGS =10V, ID = 27.4A
nC VDS = 100V
VDD = 100V, ID = 27.4A,
ns VGS =10V, RG = 2.35
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) À
27.4
110
A
VSD Diode Forward Voltage
— — 1.9 V
Tj = 25°C, IS = 27.4A, VGS = 0V Ã
trr Reverse Recovery Time
— — 950 ns Tj = 25°C, IF = 27.4A, di/dt 100A/µs
QRR Reverse Recovery Charge
— — 9.0 µC
VDD 50V Ã
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max
— — 0.83
— 0.21 —
— — 48
Units
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier website.
For footnotes refer to the last page
2 www.irf.com


Part Number JANTX2N7225
Description POWER MOSFET
Maker International Rectifier
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JANTX2N7225 Datasheet PDF





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