IRL1404S/IRL1404L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
www.DataSheet4U.com VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
40 ––– ––– V
––– 0.038 ––– V/°C
––– ––– 0.004 Ω
0.0059
1.0 ––– 3.0 V
93 ––– ––– S
––– ––– 20 µA
––– ––– 250
––– ––– 200
nA
––– ––– -200
––– ––– 140
––– ––– 48 nC
––– ––– 60
––– 18 –––
ns
––– 270 –––
––– 38 –––
––– 130 –––
––– 4.5 ––– nH
––– 7.5 –––
––– 6600 –––
––– 1700 –––
––– 350 –––
––– 6700 –––
––– 1500 –––
––– 1500 –––
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, D = 1mA
VGS = 10V, ID = 95A
VGS = 4.3V, ID = 40A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 95A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 95A
VDS = 32V
VGS = 5.0V, See Fig. 6
VDD = 20V
ID = 95A
RG = 2.5Ω VGS = 4.5V
RD = 0.25Ω
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
S
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 160
––– ––– 640
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V
––– 63 94 ns TJ = 25°C, IF = 95A
––– 170 250 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2 www.irf.com
