International Rectifier Electronic Components Datasheet

L1404S Datasheet

IRL1404S

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l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

www.DataSheet4U.com l Fully Avalanche Rated

Description

Seventh Generation HEXFET® power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

D2Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRL1404L) is available for low-

profile applications.

Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TA = 25°C

PD @TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Parameter

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

RθJC

RθCS

RθJA

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient (PCB Mounted)

www.irf.com

PD - 93854A

IRL1404S

IRL1404L

HEXFET® Power MOSFET

VDSS = 40V

RDS(on) = 0.004Ω

ID = 160A

D2Pak

IRL1404S

TO-262

IRL1404L

Max.

160

110

640

3.8

200

1.3

± 20

520

5.0

-55 to + 175

300 (1.6mm from case)

Typ.

–––

0.50

–––

Max.

0.75

–––

Units

W/°C

V/ns

°C

Units

°C/W

02/22/02

International Rectifier Electronic Components Datasheet

L1404S Datasheet

IRL1404S

No Preview Available !

IRL1404S/IRL1404L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

www.DataSheet4U.com VGS(th)

gfs

IDSS

IGSS

Qgs

Qgd

td(on)

td(off)

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Ciss

Coss

Crss

Coss

Coss eff.

Internal Source Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

Min. Typ. Max. Units

40 ––– ––– V

––– 0.038 ––– V/°C

––– ––– 0.004 Ω

0.0059

1.0 ––– 3.0 V

93 ––– ––– S

––– ––– 20 µA

––– ––– 250

––– ––– 200

––– ––– -200

––– ––– 140

––– ––– 48 nC

––– ––– 60

––– 18 –––

––– 270 –––

––– 38 –––

––– 130 –––

––– 4.5 ––– nH

––– 7.5 –––

––– 6600 –––

––– 1700 –––

––– 350 –––

––– 6700 –––

––– 1500 –––

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, D = 1mA

VGS = 10V, ID = 95A

VGS = 4.3V, ID = 40A

VDS = VGS, ID = 250µA

VDS = 25V, ID = 95A

VDS = 40V, VGS = 0V

VDS = 32V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 95A

VDS = 32V

VGS = 5.0V, See Fig. 6

VDD = 20V

ID = 95A

RG = 2.5Ω VGS = 4.5V

RD = 0.25Ω

Between lead,

6mm (0.25in.)

from package

and center of die contact

VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig. 5

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 32V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 32V

Source-Drain Ratings and Characteristics

Parameter

IS Continuous Source Current

(Body Diode)

ISM Pulsed Source Current

(Body Diode)

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse RecoveryCharge

ton Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 160

––– ––– 640

MOSFET symbol

showing the

integral reverse

p-n junction diode.

––– ––– 1.3 V TJ = 25°C, IS = 95A, VGS = 0V

––– 63 94 ns TJ = 25°C, IF = 95A

––– 170 250 nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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