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International Rectifier Electronic Components Datasheet

L3705N Datasheet

IRL3705N

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l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 9.1370C
IRL3705N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.01
ID =89A…
S
TO-220AB
Max.
89…
63
310
170
1.1
± 16
340
46
17
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.90
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/25/97


International Rectifier Electronic Components Datasheet

L3705N Datasheet

IRL3705N

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www.DataSheet4U.com
IRL3705N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
55 ––– ––– V VGS = 0V, ID = 250µA
––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.010
VGS = 10V, ID = 46A „
––– ––– 0.012 VGS = 5.0V, ID = 46A „
––– ––– 0.018
VGS = 4.0V, ID = 39A „
VGS(th)
Gate Threshold Voltage
1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
50 ––– ––– S VDS = 25V, ID = 46A
IDSS Drain-to-Source Leakage Current
––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
Qg Total Gate Charge
––– ––– 98
ID = 46A
Qgs Gate-to-Source Charge
––– ––– 19 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 49
VGS = 5.0V, See Fig. 6 and 13 „
td(on)
Turn-On Delay Time
––– 12 –––
VDD = 28V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 140 –––
––– 37 –––
––– 78 –––
ns ID = 46A
RG = 1.8Ω, VGS = 5.0V
RD = 0.59Ω, See Fig. 10 „
LD Internal Drain Inductance
Between lead,
––– 4.5 ––– nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
and center of die contact
G
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 3600 –––
––– 870 –––
––– 320 –––
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 89…
––– ––– 310
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V „
––– 94 140 ns TJ = 25°C, IF = 46A
––– 290 440 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25, IAS = 46A. (See Figure 12)
ƒ ISD 46A, di/dt 250A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
… Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4


Part Number L3705N
Description IRL3705N
Maker International Rectifier
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L3705N Datasheet PDF






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