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International Rectifier Electronic Components Datasheet

L3713S Datasheet

IRL3713S

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PD - 94184C
SMPS MOSFET
IRL3713
IRL3713S
IRL3713L
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
Benefits
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max (mΩ) ID
3.0@VGS = 10V
260A†
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL3713
D2Pak
IRL3713S
TO-262
IRL3713L
Absolute Maximum Ratings
Symbol
Parameter
www.DataSheet.co.kr
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
TJ , TSTG
Junction and Storage Temperature Range
Max.
30
± 20
260†
180†
1040†
330
170
2.2
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface „
Junction-to-Ambient„
Junction-to-Ambient (PCB mount)…
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
°C/W
Notes  through † are on page 11
www.irf.com
1
01/02/02
Datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

L3713S Datasheet

IRL3713S

No Preview Available !

IRL3713/S/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
–––
Static Drain-to-Source On-Resistance –––
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
1.0
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
––– –––
0.027 –––
2.6 3.0
3.3 4.0
––– 2.5
––– 20
––– 100
––– 200
––– -200
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 38A ƒ
VGS = 4.5V, ID = 30A ƒ
V VDS = VGS, ID = 250µA
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs Forward Transconductance
Qg Total Gate Charge
76 ––– –––
––– 75 110
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
––– 24 –––
––– 37 –––
Qoss
td(on)
Output Gate Charge
Turn-On Delay Time
––– 61 92
––– 16 –––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
160
40www.DataSheet.co.kr
–––
–––
tf Fall Time
Ciss Input Capacitance
––– 57 –––
––– 5890 –––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 3130 –––
––– 630 –––
Units
S
nC
ns
pF
Conditions
VDS = 15V, ID = 30A
ID = 30A
VDS = 15V
VGS = 4.5V
VGS = 0V, VDS = 15V
VDD = 15V
ID =30A
RG = 1.8
VGS = 4.5V
ƒ
VGS = 0V
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
1530
46
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
––– 260†
––– 1040†
A
0.80 1.3
0.68 –––
75 110
140 210
78 120
160 240
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 30A, VGS = 0V ƒ
TJ = 125°C, IS = 30A, VGS = 0V ƒ
TJ = 25°C, IF = 30A, VR=20V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 30A, VR=20V
di/dt = 100A/µs ƒ
www.irf.com
Datasheet pdf - http://www.DataSheet4U.net/


Part Number L3713S
Description IRL3713S
Maker International Rectifier
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L3713S Datasheet PDF






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