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LL024N - IRLL024N

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Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • L IN G D IM E N S IO N : M IL L IM E T E R . . 3 . D IM E N S IO N M E A S U R E D @ H U B . 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E . 1 4 .4 0 (.5 6 6 ) 1 2 .4 0 (.4 8 8 ) 3 1 8 .4 0 (.7 2 4 ) M AX . 4 WORLD.

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PD - 91895 IRLL024N HEXFET® Power MOSFET l l l www.DataSheet4U.com l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.065Ω G S ID = 3.1A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
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