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LL2705 - IRLL2705

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • om 7 Datasheet pdf - http://www. DataSheet4U. net/ www. DataSheet. co. kr IRLL2705 Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R W W = W E EK P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP B O TT O M 8 www. irf. com Datasheet pdf - http://www. DataSheet4U. net/ www. DataSheet. co. kr IRLL2705 Tape & Reel Informa.

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Full PDF Text Transcription for LL2705 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LL2705. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet.co.kr PD- 91380B IRLL2705 HEXFET® Power MOSFET Surface Mount Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced...

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gic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance Description l l D VDSS = 55V RDS(on) = 0.04Ω G ID = 3.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor ph

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