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International Rectifier Electronic Components Datasheet

MBRS190TRPbF Datasheet

(MBRS1100TRPbF / MBRS190TRPbF) SCHOTTKY RECTIFIER

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SCHOTTKY RECTIFIER
Bulletin PD-20788 07/04
MBRS190TRPbF
MBRS1100TRPbF
1 Amp
IF(AV) = 1.0Amp
VR = 90-100V
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Major Ratings and Characteristics
Characteristics
Value
IF(AV) Rectangular waveform
VRRM
IFSM @ tp = 5 µs sine
VF @ 1.0 Apk, TJ=125°C
TJ range
1.0
90 - 100
870
0.63
- 55 to 175
Units
A
V
A
V
°C
Description/ Features
The MBRS190TRPbF, MBRS1100TRPbF surface-mount
Schottky rectifier has been designed for applications requir-
ing low forward drop and very small foot prints on PC boards.
Typical applications are in disk drives, switching power
supplies, converters, free-wheeling diodes, battery charging,
and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Case Styles
MBRS190TRPbF
MBRS1100TRPbF
www.irf.com
SMB
1


International Rectifier Electronic Components Datasheet

MBRS190TRPbF Datasheet

(MBRS1100TRPbF / MBRS190TRPbF) SCHOTTKY RECTIFIER

No Preview Available !

MBRS190TRPbF, MBRS1100TRPbF
Bulletin PD-20788 07/04
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
MBRS190TRPbF
90
MBRS1100TRPbF
100
Absolute Maximum Ratings
Parameters
Value
IF(AV) Max. Average Forward Current
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current
1.0
870
50
EAS Non- Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
1.0
0.5
Units Conditions
A 50% duty cycle @ TL = 147 °C, rectangular wave form
A 5µs Sine or 3µs Rect. pulse Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRMapplied
mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
Value Units
Conditions
VFM Max. Forward Voltage Drop
* See Fig. 1
(1)
IRM Max. Reverse Leakage Current (1)
* See Fig. 2
CT Typical Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Volatge Rate of Charge
(Rated VR)
(1) Pulse Width < 300µs, Duty Cycle < 2%
0.78
0.62
0.5
1.0
42
2.0
10000
V
V
mA
mA
pF
nH
V/ µs
@ 1A
TJ = 25 °C
@ 1A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = rated VR
VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
Measured lead to lead 5mm from package body
Thermal-Mechanical Specifications
Parameters
Value Units
Conditions
TJ Max. Junction Temperature Range (*) - 55 to 175 °C
Tstg Max. Storage Temperature Range - 55 to 175 °C
RthJL Max. Thermal Resistance
Junction to Lead
36 °C/W
(**)
RthJA Max. Thermal Resistance
Junction to Ambient
80 °C/W
DC operation (See Fig. 4)
DC operation
wt Approximate Weight
0.10(0.003) g (oz.)
Case Style
SMB
Similar to DO-214AA
Device Marking
IR19-IR10
(*)
dPtot
dTj
<
1
Rth( j-a)
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
2
www.irf.com


Part Number MBRS190TRPbF
Description (MBRS1100TRPbF / MBRS190TRPbF) SCHOTTKY RECTIFIER
Maker International Rectifier
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MBRS190TRPbF Datasheet PDF






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International Rectifier





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