900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




International Rectifier Electronic Components Datasheet

MIL-PRF-19500 Datasheet

RADIATION HARDENED POWER MOSFET

No Preview Available !

RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
PD - 91394E
IRHM7460SE
JANSR2N7392 500V
N-CHANNEL
REF: MIL-PRF-19500/661
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHM7460SE 100K Rads (Si) 0.32
I D QPL Part Number
18A JANSR2N7392
www.DataSheet4U.com
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA
Features:
! Single Event Effect (SEE) Hardened
! Ultra Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
18
11.7 A
72
250 W
2.0 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
500
Avalanche Current
18
Repetitive Avalanche Energy
25
Peak Diode Recovery dv/dt
3.8
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10 sec.)
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
5/17/01


International Rectifier Electronic Components Datasheet

MIL-PRF-19500 Datasheet

RADIATION HARDENED POWER MOSFET

No Preview Available !

IRHM7460SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
500
—
—
—
2.5
6.0
—
—
IGSS
www.DataSIhGeSeSt4U.com
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Typ Max Units
—— V
0.66 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.32
— 0.36
— 4.5
——
— 50
— 250
— 100
— -100
— 180
— 30
— 95
— 29
— 93
— 90
— 59
6.8 —
3500
730
260
—
—
—
V
S( )
µA
nA
nC
ns
VGS = 12V, ID = 11.7A
VGS = 12V, ID = 18A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 11.7A
VDS= 400V ,VGS=0V
VDS = 400V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 18A
VDS = 250V
VDD =250V, ID =18A,
VGS =12V, RG = 2.35
nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode) — —
ISM Pulse Source Current (Body Diode)
——
18
72
A
Test Conditions
VSD Diode Forward Voltage
trr Reverse Recovery Time
QRR Reverse Recovery Charge
— — 1.8 V
— — 800 nS
— — 16 µC
Tj = 25°C, IS = 18A, VGS = 0V
Tj = 25°C, IF = 18A, di/dt 100A/µs
VDD 50V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
— — 0.50
— 0.21 — °C/W
— — 48
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com


Part Number MIL-PRF-19500
Description RADIATION HARDENED POWER MOSFET
Maker International Rectifier
PDF Download

MIL-PRF-19500 Datasheet PDF






Similar Datasheet

1 MIL-PRF-19500 SEMICONDUCTOR DEVICE/ TRANSISTOR/ NPN/ SILICON/ LOW-POWER TYPES 2N2484/ 2N2484UA/ 2N2484UB/ JAN/ JANTX/ JANTXV/ JANS/ JANHC/ AND JANKC
STMicroelectronics
2 MIL-PRF-19500 RADIATION HARDENED POWER MOSFET
International Rectifier





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy