MIL-PRF-19500 Datasheet | International Rectifier

Features : ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 18 11.7 72 250 2.0 ±20 500 18 25 3.8 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns o 300 (0.063 in. (1.6mm) from case for 10 sec.) 9.3 (Typical) g .irf. 5/17/01 IRHM7460SE Pre-Irradiation @ Tj = 25°C (Unless Otherwise Specified) Min 500 — — — 2.5 6.0 — — — — — — — — — — — — Electrical Characteristics Parameter Typ Max Units — 0.66 — — — — — — — — — — — — — — — 6.8 — — 0.32 0.36 4.5 — 50 250 100 -100 180 30 95 29 93 90 59 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0m A Reference to 25°C, ID = 1.0m A VGS = 12V, ID = 11.7A ➃ VGS = 12V, ID = 18A VDS = VGS, ID = 1.0m A VDS > 15V, IDS = 11.7A ➃ VDS= 400V ,VGS=0V VDS = 400V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 18A VDS = 250V VDD =250V, ID =18A, VGS =12V, RG = 2.35Ω BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS .. Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance n A n C ns n...