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International Rectifier Electronic Components Datasheet

P101 Datasheet

PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

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Bulletin I27125 rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability
Electrically isolated base plate
Available up to 1200 VRRM, VDRM
High dynamic characteristics
Wide choice of circuit configurations
Simplified mechanical design and assembly
UL E78996 approved
Description
The P100 series of Integrated Power Circuits
consists of power thyristors and power diodes
configured in a single package. With its isolating
base plate, mechanical designs are greatly simpli-
fied giving advantages of cost reduction and
reduced size.
Applications include power supplies, control cir-
cuits and battery chargers.
Major Ratings and Characteristics
Parameters
P100
Units
ID
IFSM
I2t
I2t
VRRM
VINS
TJ
@ TC
@50Hz
@ 60Hz
@50Hz
@ 60Hz
25
85
357
375
637
580
6365
400 to 1200
2500
- 40 to 125
A
°C
A
A
A2s
A2s
A2s
V
V
°C
www.irf.com
25A
1


International Rectifier Electronic Components Datasheet

P101 Datasheet

PASSIVATED ASSEMBLED CIRCUIT ELEMENTS

No Preview Available !

P100 Series
Bulletin I27125 rev. A 04/99
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
P101, P121, P131
VRRM maximum repetitive VRSM maximum non-
peak reverse voltage repetitive peak reverse
voltage
VV
VDRM maximum
repetitive peak off-state
voltage
V
400 500 400
P102, P122, P132
600
700
600
P103, P123, P133
800
900
800
P104, P124, P134
1000
1100
1000
P105, P125, P135
1200
1300
1200
IRRM max.
@ TJ max.
mA
10
On-state Conduction
Parameter
ID
I
TSM
I FSM
Maximum DC output current
Max. peak one-cycle
non-repetitive on-state
or forward current
I2t Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO) Max. value of threshold voltage
r t1 Max. level value of on-state
slope resistance
VTM Max. peak on-state or
V forward voltage drop
FM
di/dt Maximum non repetitive rate of
rise of turned on current
I Maximum holding current
H
IL Maximum latching current
P100
25
357
375
300
315
637
580
450
410
6365
0.82
12
1.35
200
130
250
Units Conditions
A @ TC = 85°C, full bridge
t = 10ms No voltage
t = 8.3ms reapplied
A
t = 10ms 100% VRRM
t = 8.3ms reapplied Sinusoidal half wave,
A2s
A2s
t = 10ms
t = 8.3ms
No voltage
reapplied
Initial TJ = TJ max.
t = 10ms
t = 8.3ms
100% V
RRM
reapplied
t = 0.1 to 10ms, no voltage reapplied
I2t for time tx = I2t . tx
V TJ = 125°C
m
T
J
=
125°C,
Av.
power
=
VT(TO)
*
IT(AV)
+
rt
+
(I )2
T(RMS)
V TJ = 25°C, ITM = π x IT(AV)
A/µs
mA
mA
TJ = 125°C from 0.67 VDRM
ITM = π x IT(AV), Ig = 500mA, tr < 0.5µs, tp > 6µs
T = 25°C anode supply = 6V, resistive load, gate open
J
TJ = 25°C anode supply = 6V, resistive load
2 www.irf.com


Part Number P101
Description PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Maker International Rectifier
Total Page 7 Pages
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