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International Rectifier Electronic Components Datasheet

PVDZ172N Datasheet

POWER MOSFET PHOTOVOLTAIC RELAY

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Data Sheet No. 1.039
PVDZ172N
HEXFET® POWER MOSFET PHOTOVOLTAIC RELAY
Microelectronic
Power IC Relay
Single Pole, Normally Open
0-60V DC, 1.5A
General Description
PVDZ172N Features
The PVDZ172N Photovoltaic Relay is a single-
pole, normally open solid state relay that can
replace electromechanical relays used for gen-
eral purpose switching of DC loads. It utilizes
International Rectifier’s HEXFET power MOS-
FET as the output switch, driven by an integrated
circuit photovoltaic generator of novel construc-
tion. The output switch is controlled by radiation
from a GaAlAs light emitting diode (LED) which
is optically isolated from the photovoltaic gen-
erator.
250mW On-Resistance s
Bounce-free Operation s
1.5 Amp capacity s
4000 VRMS I/O isolation s
Solid-State reliability s
UL recognition and CSA certification pending s
These units overcome the limitations of both
electromechanical and reed relays by offering
the solid-state advantages of high sensitivity,
miniaturization, no contact bounce, long opera-
tional life, insensitivity to external magnetic fields,
shock and vibration, and high reliability inherent
with solid state technology. They are ideally
suited for switching high currents or low level
signals without distortion or injection of electri-
cal noise.
These relays are packaged in 8-pin, molded
DIP packages and available with thru-hole and
SMT (gull-wing) leads, in plastic shipping tubes.
Applications
Part Identification
Portable Electronics s
Programmable Logic Controllers s
Computers and Peripheral Devices s
Audio Equipment s
Power Supplies and Power Distribution s
Instrumentation s
PVDZ172N
PVDZ172NS
thru-hole
SMT (gull-wing)
(HEXFET is the registered trademark for International Rectifier Power MOSFETs)
To Order


International Rectifier Electronic Components Datasheet

PVDZ172N Datasheet

POWER MOSFET PHOTOVOLTAIC RELAY

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INTERNATIONAL RECTIFIER
Next Data Sheet
PVDZ172N Photovoltaic Relay
Electrical Specifications (-40°C TA =+85°C unless otherwise specified)
INPUT CHARACTERISTICS
Min. Control Current (see Figures 1 and 2)
Limits
10
Max. Control Current for Off-State Resistance @ TA=+25°C
0.4
Control Current Range (Caution: Current limit input LED, see Fig.6)
5.0 to 25
Max. Reverse Voltage
7.0
Units
mA
mA
mA
V
OUTPUT CHARACTERISTICS
Operating Voltage Range
Max. Load Current 40° C (See Fig. 1 and 2)
Max. Pulsed Load Current @TA=+25°C (100 ms @ 10% duty Cycle)
Max. Turn-On Time @TA=+25°C (see Fig. 7)
For 500mA, 50VDC Load, 10mA Control
Max. Turn-Off Time @TA=+25°C (see Fig. 7)
For 500mA, 50VDC Load, 10mA Control
Max. On State Resistance @TA=+25°C(pulsed) (See Fig. 4)
1.0A Load, 10mA Control
Min. Off State Resistance @TA=+25°C @ 48 VDC (see Fig. 5)
Min. Off-State dv/dt
Output Capacitance (See Fig. 9)
0 to 60
1.5
4.0
2.0
0.5
250
108
1000
150
V(DC)
A(DC)
A(DC)
ms
ms
m
Ohms
V/µs
pF @ 50 VDC
GENERAL CHARACTERISTICS
Dielectric Strength, Input-Output
Insulation Resistance, Input-Output , 90 VDC
Capacitance, Input-Output
Lead Temperature (1.6mm below seating plane) for 10 sec.
Ambient Temperature Range:
Operating
Storage
Limits
4000
1012 @TA=+25°C - 50% RH
1.0
+260
-40 to +85
-40 to +100
Wiring Diagrams
Anode
Schematic
Cathode
8 Source
DC
5 Drain
Units
V(RMS)
pF
°C
°C
°C
Electromechanical
Analogy
(HEXFET is the registered trademark for International Rectifier Power MOSFETs) To Order


Part Number PVDZ172N
Description POWER MOSFET PHOTOVOLTAIC RELAY
Maker International Rectifier
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PVDZ172N Datasheet PDF






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