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International Rectifier Electronic Components Datasheet

RDHA710SE10A2FK Datasheet

Radiation Hardended / Solid-State Relay

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RDHA710SE10A2FK pdf
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PD-96983
Radiation Hardended,
Solid-State Relay
with Buffered Inputs
RDHA710SE10A2FK
Dual, 100V, 10A
gProduct Summary
Part
Number
Breakdown
Voltage
RDHA710SE10A2FK
100V
Current
10A
tr / tf
Fast
Logic Drive
Voltage
3.3V
8-PIN SURFACE MOUNT
Description
The RDHA710SE10A2FK is a radiation hardened
dual solid-state relay in a hermetic package. It is
configured as a dual, single-pole-single-throw
(SPST) normally open relay with common input
supply. This device is characterized for 100 krad(Si)
total ionizing dose and neutron fluence level of
1.8E12 n/cm2. The input and output MOSFETs utilize
International Rectifier’s R5 technology. The
RDHA710SE10A2FK is optically coupled and
actuated by standard logic inputs.
Features:
n Total Dose Capability to 100 krad(Si)
n Neutron Fluence Level of 1.8E12 n/cm2
n Optically Coupled
n 1000VDC Input to Output Isolation
n Buffered Input Stage
n 3.3V Compatible Logic Level Input
n Controlled Switching Times
n Hermetically Sealed Package
Absolute Maximum Ratings per Channel @ Tj=25°C (unless otherwise specified)
Parameter
Symbol
Value
Units
gOutput Maximum Voltage
f gOutput Current
eInput Buffer Voltage - (pins 4 & 6)
VS 100 V
IO 12 A
VIN ±7.5 V
Input Buffer Current
Input Supply Voltage (pin 5)
Input Supply Current
fgPower Dissipation
IIN
VDD
IDD
PDISS
±10
5.25
25
60
mA
V
mA
W
Operating Temperature Range
TJ -55 to +125
Storage Temperature Range
Lead Temperature
TS
-65 to +150
°C
TL 300
For notes, please refer to page 3
www.irf.com
1
03/29/06


International Rectifier Electronic Components Datasheet

RDHA710SE10A2FK Datasheet

Radiation Hardended / Solid-State Relay

No Preview Available !

RDHA710SE10A2FK pdf
RDHA710SE10A2FK
General Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified)
Parameter
Group A
Test Conditions
Subgroups
ceInput Buffer Threshold Voltage
VDD = 5.0V, IO= 10A
Input-to-Output Leakage Current
cOutput Capacitance
cThermal Resistance
1 VI-O = 1.0KVdc, dwell = 5.0s
VIN = 0.1V, f = 1.0MHz, VS =25V
TC = 25°C
c fVIN = 3.3V, VDD = 5.0V ,
MTBF (Per Channel)
MIL-HDBK-217F, SF@Tc= 25°C
Symbol
VIN(TH)
II-O
COSS
RTHJC
Min.
3.0
--
--
--
6.0
Typ. Max. Units
-- -- V
-- 1.0 µA
365 -- pF
-- 1.7 °C/W
-- -- MHrs
Pre-Irradiation
Electrical Characteristics per Channel @ -55°CdTCd+125°C (Unless Otherwise Specified)
Parameter
Output On-Resistance
Output Leakage Current
Input Supply Current
Input Buffer Current
hTurn-On Delay
hTurn-Off Delay
d hRise Time ,
d hFall Time ,
Group A
Test Conditions
Subgroups
1
2
1
2
1,2,3
VIN = 3.3V
VDD = 5.0V, IO= 10A
VIN = 0.1V, VS = 100V
VIN = 0.1V, VS = 80V
VDD = 5.0V, IO= 10A
1
2,3 VIN = 3.3V
1,2,3
1,2,3
VIN =3.3V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
VIN =0.1V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
1,2,3
1,2,3
VIN =3.3V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
VIN =0.1V, VDD =5.0V, VS =30V
RC = 7.0/100µF, PW = 50ms
Symbol Min. Typ. Max. Units
-- 0.070 0.100
RDS(ON) -- 0.125 0.165
IO
--
--
--
--
25
250
µA
IDD -- 18 25 mA
IIN
-- -- 1.0 µA
-- -- 3.0
ton -- 0.18 0.45
toff -- 0.50 0.75
ms
tr -- 0.25 0.40
tf -- 1.50 1.80
For notes, please refer to page 3
2
www.irf.com


Part Number RDHA710SE10A2FK
Description Radiation Hardended / Solid-State Relay
Maker International Rectifier
Total Page 6 Pages
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