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International Rectifier Electronic Components Datasheet

RDHB710SE20A2SX Datasheet

Solid State Relay

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PD-97808
Radiation Hardended,
Solid-State Relay
with Buffered Inputs
RDHB710SE20A2SX
Dual, 200V, 10A
Product Summary 5
Part
Number
Breakdown
Voltage
RDHB710SE20A2SX
200V
Current
10A
tr / tf
Logic Drive
Voltage
Controlled
3.3V
Description
The RDHB710SE20A2SX is a radiation hardened
dual solid-state relay in a hermetic package. It is
configured as a dual, single-pole-single-throw
(SPST) normally open relay with common input
supply. This device is characterized for 100 Krad(Si)
total ionizing dose, and neutron fluence level of
1.8E12 n/cm2. The input and output MOSFETs utilize
International Rectifier’s R6 technology. The
RDHB710SE20A2SX is optically coupled and
actuated by standard logic inputs.
8-PIN SURFACE MOUNT
Features:
n Total Dose Capability to 100 Krad (Si)
n Neutron Fluence Level of 1.8E12 n/cm2
n Optically Coupled
n 1000VDC Input to Output Isolation
n Buffered Input Stage
n 3.3V Compatible Logic Level Input
n Controlled Switching Times
n Hermetically Sealed Package
Absolute Maximum Ratings per Channel @ TJ = 25°C (unless otherwise specified)
Output Voltage 5, 8
Parameter
Output Current 4, 5
Input Buffer Voltage - (Pins 4 & 6) 3
Input Buffer Current
Input Supply Voltage (Pin 5) 7
Input Supply Current 7
Power Dissipation 4, 5
Operating Temperature Range
Storage Temperature Range
Lead Temperature
Symbol
VS
IO
VIN
IIN
VDD
IDD
PDISS
TJ
TS
TL
Value
200
10
±7.0
±10
10
25
73
-55 to +150
-65 to +150
300
Units
V
A
V
mA
V
mA
W
°C
For Notes, please refer to page 3
www.irf.com
1
04/22/13


International Rectifier Electronic Components Datasheet

RDHB710SE20A2SX Datasheet

Solid State Relay

No Preview Available !

RDHB710SE20A2SX
Dual, 200V, 10A
General Characteristics per Channel @ -55°C £ TC £ +125°C (unless otherwise specified)
Parameter
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
Input Buffer Threshold Voltage 1, 3
VDD = 5.0V, IO = 10A
VIN(TH) 3.0
V
Input-to-Output Leakage Current
1 VI-O = 1.0KVdc, dwell = 5.0s
TC = 25°C
II-O
1.0 µA
Output Capacitance 1
VIN = 0.1V, f = 1.0MHz,
VS = 25V, TC = 25°C
COSS 210 pF
Thermal Resistance 1
VIN = 3.3V, VDD = 5.0V 1, 4
RTHJC
1.4 °C/W
MTBF (Per Channel)
MIL-HDBK-217F, SF@Tc= 25°C
6.0
MHrs
Weight
W 25 gms
Pre-Irradiation
Electrical Characteristics per Channel @ -55°C £ TC £ +125°C (unless otherwise specified)
Parameter
Output On-Resistance
Output Leakage Current
Input Supply Current
Input Buffer Current
Turn-On Delay 6
Turn-Off Delay 6
Rise Time 2, 6
Fall Time 2, 6
Group A
Test Conditions
Symbol Min. Typ. Max. Units
Subgroups
1
2
1
2
1, 2, 3
1
2, 3
VIN = 3.3V
VDD = 5.0V, IO= 10A
VIN = 0.1V, VS = 200V
VIN = 0.1V, VS = 150V
VDD = 5.0V, IO= 10A
VDD = 10V, IO= 10A 1, 7
VIN = 3.3V
RDS(ON)
IO
IDD
IIN
0.15
0.29
25
µA
250
10 15
mA
25
1.0
µA
3.0
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
VIN = 3.3V, VDD = 5.0V, VS = 50V
RL = 5, PW = 50ms
VIN = 0.1V, VDD = 5.0V, VS = 50V
RL = 5, PW = 50ms
VIN = 3.3V, VDD = 5.0V, VS = 50V
RL = 5, PW = 50ms
VIN = 0.1V, VDD = 5.0V, VS = 50V
RL = 5, PW = 50ms
ton
toff
tr
tf
1.5
10
ms
0.5
2.5
For Notes, please refer to page 3
2
www.irf.com


Part Number RDHB710SE20A2SX
Description Solid State Relay
Maker International Rectifier
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