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International Rectifier Electronic Components Datasheet

RGBC40M Datasheet

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A)

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Preliminary Data Sheet PD - 9.1074
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz)
C
G
E
n-channel
IRGBC40M
Short Circuit Rated
Fast IGBT
VCES = 600V
VCE(sat) 3.0V
@VGE = 15V, IC = 24A
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
40
24
80
80
10
±20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-313
Min.
Typ.
0.50
2 (0.07)
Max.
0.77
80
Units
°C/W
g (oz)
Revision 1
To Order


International Rectifier Electronic Components Datasheet

RGBC40M Datasheet

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A)

No Preview Available !

RGBC40M pdf
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IRGBC40M
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
V(BR)CES/TJ
VCE(on)
VGE(th)
VGE(th)/TJ
gfe
ICES
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Min.
600
20
3.0
9.2
Typ. Max. Units
—— V
—— V
0.70 — V/°C
2.0 3.0
2.6 — V
2.4 —
— 5.5
-12 — mV/°C
12 — S
— 250 µA
— 1000
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1.0mA
IC = 24A
VGE = 15V
IC = 40A
IC = 24A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 24A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Notes:
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10
Min. Typ. Max. Units
Conditions
— 59 80
IC = 24A
— 8.6 10
— 25 42
nC VCC = 400V
VGE = 15V
— 26 —
— 37 —
— 240 410
— 230 420
TJ = 25°C
ns IC = 24A, VCC = 480V
VGE = 15V, RG = 10
Energy losses include "tail"
— 0.75 —
— 1.65 — mJ
— 2.4 3.6
10 — —
— 28 —
µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10, VCPK < 500V
TJ = 150°C,
— 37 —
— 380 —
ns IC = 24A, VCC = 480V
VGE = 15V, RG = 10
— 460 —
Energy losses include "tail"
— 4.5 — mJ
— 7.5 — nH Measured 5mm from package
— 1500 —
VGE = 0V
— 190 —
— 20 —
pF VCC = 30V
ƒ = 1.0MHz
Repetitive rating; pulse width limited
by maximum junction temperature.
Pulse width 80µs; duty factor 0.1%.
Pulse width 5.0µs,
single shot.
Refer to Section D for the following:
Package Outline 1 - JEDEC Outline TO-220AB
C-314
Section D - page D-12
To Order


Part Number RGBC40M
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A)
Maker International Rectifier
Total Page 2 Pages
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