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International Rectifier Electronic Components Datasheet

RHN7150 Datasheet

TRANSISTOR N-CHANNEL

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Provisional Data Sheet No. PD-9.720A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHN7150
IRHN8150
N-CHANNEL
MEGA RAD HARD
100 Volt, 0.055, MEGA RAD HARD HEXFET
International Rectifier’s MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 106 Rads (Si). Under identical pre-
and post-radiation test conditions, International Rectifier’s
RAD HARD HEXFETs retain identical electrical specifi-
cations up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads
(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal operation
within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Product Summary
Part Number
BV DSS
IRHN7150
100V
IRHN8150
100V
RDS(on)
0.055
0.055
ID
34A
34A
Features:
s Radiation Hardened up to 1 x 106 Rads (Si)
s Single Event Burnout (SEB) Hardened
s Single Event Gate Rupture (SEGR) Hardened
s Gamma Dot (Flash X-Ray) Hardened
s Neutron Tolerant
s Identical Pre- and Post-Electrical Test Conditions
s Repetitive Avalanche Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
s Surface Mount
s Light-weight
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.
Absolute Maximum Ratings
Pre-Radiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current Œ
Repetitive Avalanche Energy Œ
dv/dt
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
IRHN7150, IRHN8150
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
300 (for 5 sec.)
2.6 (typical)
Units
A
W
W/K 
V
mJ
A
mJ
V/ns
oC
g


International Rectifier Electronic Components Datasheet

RHN7150 Datasheet

TRANSISTOR N-CHANNEL

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IRHN7150, IRHN8150 Devices
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
100
2.0
8.0
Typ. Max. Units
—— V
0.13 — V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
0.055
0.066
— 4.0
— 25
— 250
— 100
— -100
— 160
— 35
— 65
— 45
— 190
— 170
— 130
0.8 —
2.8 —
4300
1200
200
VGS = 12V, ID = 21A
VGS = 12V, ID = 34A

V VDS = VGS, ID = 1.0 mA
S( )
VDS 15V, IDS = 21A 
µA
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
VGS =12V, ID = 34A
nC VDS = Max. Rating x 0.5
(see figures 23 and 31)
VDD = 50V, ID = 34A,
ns
RG = 2.35
(see figure 28)
Measured from the Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to internal inductances.
nH
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
pF f = 1.0 MHz
(see figure 22)
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) Œ
— — 34 A Modified MOSFET symbol showing the
— — 136
integral reverse p-n junction rectifier.
VSD
t rr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB Junction-to-PC board
— — 1.9 V
— — 570 ns
— — 5.8 µC
Tj = 25°C, IS = 34A, VGS = 0V 
Tj = 25°C, IF = 34A, di/dt 100A/µs
VDD 50V 
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Min. Typ. Max. Units
Test Conditions
— — 0.83
K/W
— TBD —
soldered to a copper-clad PC board
To Order


Part Number RHN7150
Description TRANSISTOR N-CHANNEL
Maker International Rectifier
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