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International Rectifier Electronic Components Datasheet

SI3443DV Datasheet

Power MOSFET

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PD- 93795B
Si3443DV
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l -2.5V Rated
D1
D2
G3
A
6D
5D
VDSS = -20V
4 S RDS(on) = 0.065
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
Top View
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
-20
-4.4
-3.5
-20
2.0
1.3
0.016
31
± 12
-55 to + 150
Max.
62.5
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
1
01/13/03


International Rectifier Electronic Components Datasheet

SI3443DV Datasheet

Power MOSFET

No Preview Available !

Si3443DV
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-20 ––– –––
––– -0.005 –––
––– 0.034 0.065
––– 0.053 0.090
––– 0.060 0.100
-0.60 ––– -1.2
V
V/°C
V
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -4.5V, ID = -4.4A ‚
VGS = -2.7V, ID = -3.7A ‚
VGS = -2.5V, ID = -3.5A ‚
VDS = VGS, ID = -250µA
––– 12 ––– S VDS = -10V, ID = -4.4 A
––– ––– -1.0
––– ––– -5.0
µA VDS = -20V, VGS = 0V
VDS = -20V, VGS = 0V, TJ = 70°C
––– ––– -100 nA VGS = -12V
––– ––– 100
VGS = 12V
––– 11 15
ID = -4.4A
––– 2.2 ––– nC VDS = -10V
––– 2.9 –––
VGS = -4.5V ‚
––– 12 50
VDD = -10V, VGS = -4.5V ‚
––– 33 60 ns ID = -1.0A
––– 70 100
RG = 6.0
––– 72 100
RD = 10 Ω, ‚
––– 1079 –––
––– 220 –––
VGS = 0V
pF VDS = -10V
––– 152 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
51
30
Max.
-2.0
-20
-1.2
77
44
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C, IF = -1.7A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 300µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 5sec.
„ Starting TJ = 25°C, L = 6.8mH
RG = 25, IAS = -3.0A.
2 www.irf.com


Part Number SI3443DV
Description Power MOSFET
Maker International Rectifier
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SI3443DV Datasheet PDF






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