www.DataSheet4PU.rceomvious Datasheet
ST110S Series
Index
Next Data Sheet
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
04 400
ST110S
08
12
14
16
800
1200
1400
1600
VRSM , maximum non-
repetitive peak voltage
V
500
900
1300
1500
1700
IDRM/IRRM max.
@ TJ = TJ max
mA
20
On-state Conduction
Parameter
I Max. average on-state current
T(AV)
@ Case temperature
I Max. RMS on-state current
T(RMS)
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t Maximum I2t for fusing
I2√t Maximum I2√t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage
IH Maximum holding current
IL Typical latching current
Switching
di/dt
Parameter
Max. non-repetitive rate of rise
of turned-on current
td Typical delay time
tq Typical turn-off time
ST110S
110
90
175
2700
2830
2270
2380
36.4
33.2
25.8
23.5
364
0.90
0.92
1.79
1.81
1.52
600
1000
Units Conditions
A 180° conduction, half sine wave
°C
A DC @ 85°C case temperature
t = 10ms No voltage
t = 8.3ms reapplied
A t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2 √s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
mΩ
(I > π x IT(AV)),TJ = TJ max.
V Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse
mA TJ = 25°C, anode supply 12V resistive load
ST110S
Units Conditions
500 A/µs
2.0
µs
100
To Order
Gate drive 20V, 20Ω, tr ≤ 1µs
TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
