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International Rectifier Electronic Components Datasheet

T40HFL60 Datasheet

FAST RECOVERY DIODES

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FAST RECOVERY DIODES
Features
Fast recovery time characteristics
Electrically isolated base plate
3500 VRMS isolating voltage
Standard JEDEC package
Simplified mechanical designs,
rapid assembly
Large creepage distances
UL E78996 approved
Description
This serie of T-module uses fast recovery power diodes in
a single diode configuration. The semiconductors are elec-
trically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction
with the thyristor modules as a freewheel diode. Applica-
tion includes self-commutated inverters, DC choppers,
motor control, inductive heating and electronic welders.
These modules are intended for those applications where
very fast recovery characteristics are required and for
general power switching applications.
Major Ratings and Characteristics
Parameters
T40HFL T70HFL T85HFL Units
IF(AV)
IF(RMS)
IFSM
I2t
50Hz
60Hz
50Hz
60Hz
VRRM range
trr range
TJ range
40
63
475
500
1130
1030
70
110
830
870
3460
3160
100 to 1000
200 to 1000
-40 to 125
85
133
1300
1370
8550
7810
A
A
A
A
A2s
A2s
V
ns
oC
www.irf.com
Bulletin I27107 rev. A 09/97
T..HFL SERIES
T-Modules
40 A
70 A
85 A
1


International Rectifier Electronic Components Datasheet

T40HFL60 Datasheet

FAST RECOVERY DIODES

No Preview Available !

T..HFL Series
Bulletin I27107 rev. A 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage
Code
10
trr
Code
VRRM , maximum repetitive
peak reverse voltage
V
S02, S05, S10
100
T40HFL..
T70HFL..
20 S02, S05, S10
40 S02, S05, S10
200
400
T85HFL..
60 S02, S05, S10
80 S05, S10
600
800
100 S05, S10
1000
VRSM, maximum non-repetitive
peak reverse voltage
V
150
IRRMmax.
TJ= @25°C
µA
100
300
500
700
900
1100
Forward Conduction
Parameters
T40HFL T70HFL T85HFL Units Conditions
IF(AV) Max. average fwd current
@ Case temperature
40 70 85 A 180o conduction, half sine wave
70 70 70 oC
IF(RMS) Max. RMS forward current 63 110 133 A
IFSM Max. peak, one-cycle
475 830 1300 A t = 10ms No voltage
forward, non-repetitive
500 870 1370
t = 8.3ms reapplied
surge current
400 700 1100
420 730 1150
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t Maximum I2t for fusing
1130
1030
3460
3160
8550
7810
A2s t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
800 2450 6050
730 2230 5520
t = 10ms 100% VRRM
t = 8.3ms reapplied
I2t Maximum I2t for fusing
VF(TO)1 Low level value of threshold
voltage
VF(TO)2 High level value of threshold
voltage
rf1 Low level value of forward
slope resistance
rf2 High level value of forward
slope resistance
11300
0.82
0.84
7.0
6.8
34600 85500
0.87 0.84
0.90 0.86
2.77
2.67
2.15
2.07
A2s t = 0.1 to 10ms, no voltage reapplied
V TJ = 25 oC, (16.7% x π x IF(AV) < I < π x IF(AV))
TJ = 25 oC, (I > π x IF(AV))
mTJ = 25 oC, (16.7% x π x IF(AV) < I < π x IF(AV))
TJ = 25 oC, (I > π x IF(AV))
VFM Max. forward voltage drop 1.60
1.73
1.55 V IFM = π x IF(AV), TJ = 25oC, tp = 400µs square wave
Av. power = VF(TO) x IF(AV) + rfx (IF(RMS))2
Blocking
Parameters
T40HFL T70HFL T85HFL Units Conditions
IRRM Max. peak rev. leak. current
VINS RMS isolation voltage
20
3500
mA TJ = 125oC
V 50Hz, circuit to base, all terminals shorted
TJ = 25°C, t = 1 s
2 www.irf.com


Part Number T40HFL60
Description FAST RECOVERY DIODES
Maker International Rectifier
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T40HFL60 Datasheet PDF






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