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International Rectifier Electronic Components Datasheet

T70HF40 Datasheet

400V Single Diode

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www.DataSheet4U.com POWER RECTIFIER DIODES
Features
Electrically isolated base plate
Types up to 1200 VRRM
3500 VRMS isolating voltage
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
Description
These series of T-modules use standard recovery
power rectifier diodes. The semiconductors are
electrically isolated from the metal base, allowing
common heatsink and compact assembly to be built.
Applications include power supplies, battery charges,
welders, motor controls and general industrial current
rectification.
Major Ratings and Characteristics
Parameters T40HF T70HF T85HF T110HF Units
IF(AV)
IF(RMS)
IFSM
50Hz
60Hz
40
63
570
600
70
110
1200
1250
85
134
1700
1800
110
173
2000
2100
A
oC
A
A
I2t 50Hz 1630 7100 14500 20500 A2s
60Hz 1500 6450 13500 18600 A2s
I2t 16300 70700 148700 204300 A2s
VRRM range
TJ
100 to 1200
-40 to 150
V
oC
www.irf.com
Bulletin I27106 rev. B 02/02
T..HF SERIES
T-Modules
40 A
70 A
85 A
110 A
1


International Rectifier Electronic Components Datasheet

T70HF40 Datasheet

400V Single Diode

No Preview Available !

T..HF Series
Bulletin I27106 rev. B 02/02
www.DataSheet4U.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
T40HF..
T70HF..
T85HF..
T110HF..
Voltage
Code
10
20
40
60
80
100
120
VRRM , maximum repetitive
peak reverse voltage
V
100
200
400
600
800
1000
1200
VRSM , maximum non-repetitive
peak reverse voltage
V
150
300
500
700
900
1100
1300
IRRM max.
TJ= @ 25°C
µA
100
Forward Conduction
Parameters
T40HF T70HF T85HF T110HF Units Conditions
IF(AV) Max. average fwd current
@ Case temperature
IF(RMS) Max. RMS forward current
IFSM Max. peak, one-cycle
forward,non-repetitive
surge current
I2t Maximum I2t for fusing
I2t Maximum I2t for fusing
40 70 85 110 A 180o conduction, half sine wave
85 85 85
85 oC
63 110 134 173 A
570 1200 1700 2000 A t = 10ms No voltage
600 1250 1800 2100
t = 8.3ms reapplied
480 1000 1450 1700
500 1050 1500 1780
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
1630 7100 14500 20500 A2s t = 10ms No voltage
1500 6450 13500 18600
t = 8.3ms reapplied
Initial TJ = TJ max.
1150 5000 10500 14500
1050 4570 9600 13200
t = 10ms 100% VRRM
t = 8.3ms reapplied
16300 70700 148700 204300 A2s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
voltage
VF(TO)2 High level value of threshold
voltage
rf1 Low level value of forward
slope resistance
0.66
0.84
4.3
0.76
0.95
2.4
0.68
0.90
1.76
0.68
V (16.7% x π x IF(AV) < I <π x IF(AV)), @ TJmax.
0.86
(I > π x IF(AV)), @ TJmax.
1.56 m(16.7% x π x IF(AV) < I <π x IF(AV)), @ TJmax.
rf2 High level value of forward
slope resistance
VFM Max. forward voltage drop
3.1 1.7 1.08 1.12
1.30 1.35 1.27 1.35
(I > π x IF(AV)), @ TJmax.
V IFM = π x IF(AV), TJ = 25 oC, tp = 400 µs square pulse
Av. power = VF(TO) x IF(AV) + rfx (IF(RMS))2
Blocking
IRRM
VINS
Parameters
T40HF T70HF T85HF T110HF Units Conditions
Max. peak reverse leakage
current
RMS isolation voltage
15
3500
15
3500
20
3500
20
3500
mA TJ= 150 oC
V 50Hz, circuit to base, all terminals shorted
TJ= 25 oC , t = 1s
2 www.irf.com


Part Number T70HF40
Description 400V Single Diode
Maker International Rectifier
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T70HF40 Datasheet PDF






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