T..RIA Series
Bulletin I27105 rev. B 02/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
T50RIA
T70RIA
T90RIA
Voltage
Code
10
20
40
60
80
100
120
VDRM/VRRM, maximum repetitive
peak reverse voltage
V
100
200
400
600
800
1000
1200
VRSM, maximum non-repetitive
peak reverse voltage
V
150
300
500
700
900
1100
1300
On-state Conduction
IDRM/IRRM max.
@ 25°C
µA
100
Parameter
T50RIA T70RIA T90RIA Units Conditions
IT(AV) Max. average on-state current
@ Case temperature
IT(RMS) Max. RMS on-state current
ITSM Maximum peak, one-cycle
on-state, non-repetitive
surge current
I2t Maximum I2t for fusing
I2√t Maximum I2√t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1 Low level value on-state
slope resistance
rt2 High level value on-state
slope resistance
VTM Maximum on-state voltage drop
50
70
80
1310
1370
1100
1150
8550
7800
6050
5520
85500
0.97
1.13
4.1
3.3
1.60
IH Maximum holding current
IL Maximum latching current
Switching
70
70
110
1660
1740
1400
1460
13860
12650
9800
8950
138500
0.77
0.88
3.6
3.2
90
70
141
1780
1870
1500
1570
15900
14500
11250
10270
159100
0.78
0.88
2.9
2.6
A 180° conduction, half sine wave
°C
A
A t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sine half wave,
A2s t = 10ms No voltage Initial TJ = TJ max.
t = 8.3ms reapplied
A2√s
V
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
(16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
(I > π x IT(AV)), @ TJ max.
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), @ TJ max.
(I > π x IT(AV)), @ TJ max.
1.55
200
400
1.55
V ITM = π x IT(AV), TJ = 25°C., tp = 400µs square
Av. power = VT(TO) x IT(AV) + rf x (IT(RMS))2
mA Anode supply = 6V initial IT = 30A, TJ = 25°C
mA Anode supply = 6V resistive load = 10Ω
gate pulse: 10V, 100µs, TJ = 25°C
Parameter
T50RIA T70RIA T90RIA Units Conditions
tgd Typical turn-on time
trr Typical reverse recovery time
tq Typical turn-off time
0.9
3.0
110
µs TJ = 25oC Vd = 50% VDRM, ITM = 50 A
Ig = 500mA, tr <= 0.5, tp >= 6µs
µs TJ =125°C, ITM = 50A tp = 300µs di/dt =10A/µs
µs TJ = TJ max., ITM = 50A, tp = 300µs,
-di/dt = 15A/µs, Vr = 100V; linear to 80%VDRM
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