U3410 mosfet equivalent, hexfet power mosfet.
ID 3.7A 6.4A 9.0A
VDS
L
D R IV E R
200
RG
10V
D .U .T
IA S tp
+ V - DD
150
A
0 .0 1 Ω
100
Fig 12a. Unclamped Inductive Test Circuit
50
0
V D D = 25V
25 50.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead.
l
D
VDSS = 100V
G S
RDS(on) = 0.105Ω ID = 17A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi.
Image gallery
TAGS