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FRF9150D - P-Channel Power MOSFET

General Description

Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

Key Features

  • 23A, -100V, rDS(ON) = 0.140Ω.
  • Second Generation Rad Hard MOSFET Results From New Design Concepts.
  • Gamma Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 3000K RAD (Si) Survives 3E9 RAD (Si)/s at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD (Si)/s Typically Pre-RAD Specifications for 3E13 Neutrons/cm2 Usable to 3E14 Neutrons/cm2.
  • Gam.

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Other Datasheets by Intersil (Renesas)

Part Number Description
FRF9150H P-Channel Power MOSFET
FRF9150R P-Channel Power MOSFET
FRF9250D P-Channel Power MOSFET
FRF9250H P-Channel Power MOSFET
FRF9250R P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FRF9150D, FRF9150R, FRF9150H June 1998 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-254AA G S D Features • 23A, -100V, rDS(ON) = 0.140Ω • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 3000K RAD (Si) Survives 3E9 RAD (Si)/s at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.