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Intersil Electronic Components Datasheet

FRF9150D Datasheet

23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs

No Preview Available !

June 1998
FRF9150D, FRF9150R,
FRF9150H
23A, -100V, 0.140 Ohm, Rad Hard,
P-Channel Power MOSFETs
Features
• 23A, -100V, rDS(ON) = 0.140
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
• Gamma Dot
• Photo Current
• Neutron
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
- Survives 3E9 RAD (Si)/s at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- 7.0nA Per-RAD (Si)/s Typically
- Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Package
TO-254AA
G
S
D
Description
Intersil Corporation has designed a series of SECOND GENERATION hardened
power MOSFETs of both N and P channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness
is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging
from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with
current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for
any desired deviations from the data sheet.
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
D
G
S
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation
TC
TC
=
=
+25oC .
+100oC
.
.
Derated Above
......
......
+25oC
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PT
PT
..
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
FRF9150D, R, H
-100
-100
23
15
69
±20
125
50
1.00
69
23
69
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/oC
A
A
A
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
4-1
File Number 3243.2


Intersil Electronic Components Datasheet

FRF9150D Datasheet

23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs

No Preview Available !

FRF9150D, FRF9150R, FRF9150H
Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER
Drain-Source Breakdown Volts
Gate-Threshold Volts
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero-Gate Voltage
Drain Current
Rated Avalanche Current
Drain-Source On-State Volts
Drain-Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate-Charge Threshold
Gate-Charge On State
Gate-Charge Total
Plateau Voltage
Gate-Charge Source
Gate-Charge Drain
Diode Forward Voltage
Reverse Recovery Time
Junction-To-Case
Junction-To-Ambient
SYMBOL
BVDSS
VGS(TH)
IGSSF
IGSSR
IDSS1
IDSS2
IDSS3
IAR
VDS(ON)
rDS(ON)
tD(ON)
tR
tD(OFF)
tF
QG(TH)
QG(ON)
QGM
VGP
QGS
QGD
VSD
tT
RθJC
RθJA
TEST CONDITIONS
VGS = 0, ID = 1mA
VDS = VGS, ID = 1mA
VGS = -20V
VGS = +20V
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125oC
Time = 20µs
VGS = -10V, ID = 23A
VGS = -10V, ID = 15A
VDD = -50V, ID = 23A
Pulse Width = 3µs
Period = 300µs, RG = 25
0 VGS 10 (See Test Circuit)
VDD = -50V, ID = 23A
IGS1 = IGS2
0 VGS 20
ID = 23A, VGD = 0
I = 23A; di/dt = 100A/µs
Free Air Operation
LIMITS
MIN MAX
-100
-
-2.0 -4.0
- 100
- 100
-1
- 0.025
- 0.25
- 69
- -3.38
- 0.140
- 170
- 620
- 600
- 242
4 16
60 240
126 504
3 14
17 68
21 86
-0.6 -1.8
- 700
- 1.0
- 48
UNITS
V
V
nA
nA
mA
A
V
ns
nc
V
nc
V
ns
oC/W
0V
VGS = -12V
VDD
RGS
RL
VDS
DUT
ELECTRONIC SWITCH OPENS
WHEN IAS IS REACHED
VDS
L
CURRENT
TRANSFORMER
+
IAS
-
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
tP
50
VGS 20V
50
DUT
+
VDD
-
50V -150V
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
4-2


Part Number FRF9150D
Description 23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs
Maker Intersil
Total Page 6 Pages
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1 FRF9150D 23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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2 FRF9150H 23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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3 FRF9150R 23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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