HCS10MS gate equivalent, radiation hardened triple 3-input nand gate.
* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x.
The Intersil HCS10MS is a Radiation Hardened Triple 3Input NAND Gate. A high on all inputs forces the output to a Low state.
The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation harde.
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