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HCS10MS - Radiation Hardened Triple 3-Input NAND Gate

General Description

The Intersil HCS10MS is a Radiation Hardened Triple 3Input NAND Gate.

A high on all inputs forces the output to a Low state.

The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse.
  • Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ).
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET HCS10MS Radiation Hardened Triple 3-Input NAND Gate FN2435 Rev 0.00 September 1995 Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (SI)/s 20ns Pulse • Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ) • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.