HCS10MS Datasheet - Intersil

Radiation Hardened Triple 3-Input NAND Gate

HCS10MS Features

* 3 Micron Radiation Hardened SOS CMOS

* Total Dose 200K RAD (Si)

* SEP Effective LET No Upsets: >100 MEV-cm2/mg

* Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ)

* Dose Rate Survivability: >1 x 1012 RAD (Si)/s

* Dose Rate Upset >101

HCS10MS General Description

The Intersil HCS10MS is a Radiation Hardened Triple 3Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS10M.

HCS10MS Datasheet (384.21 KB)

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Datasheet Details

Part number:

HCS10MS

Manufacturer:

Intersil

File Size:

384.21 KB

Description:

Radiation hardened triple 3-input nand gate.

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HCS10MS Radiation Hardened Triple 3-Input NAND Gate Intersil

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HCS10MS Features

HCS10MS General Description

Datasheet Details

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