HS-303BEH - Radiation Hardened CMOS Dual SPDT Analog Switch
Intersil (now Renesas)
Download the HS-303BEH datasheet PDF.
This datasheet also covers the HS-303ARH variant, as both devices belong to the same radiation hardened cmos dual spdt analog switch family and are provided as variant models within a single manufacturer datasheet.
Key Features
QML, per MIL-PRF-38535.
Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeV.
Note: The manufacturer provides a single datasheet file (HS-303ARH_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HS-303BEH (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HS-303BEH. For precise diagrams, and layout, please refer to the original PDF.
Datasheet HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH Radiation Hardened CMOS Dual SPDT Analog Switch The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are mo...
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The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout compatible and functionally equivalent to the HS-303RH, but offer improved 300kRAD(Si) total dose capability. These switches offer low-resistance switching performance for analog voltages up to the supply rails. ON-resistance is low and stays reasonably constant over the full range of operating voltage and current. ON-resistance also stays reasonably constant when exposed to radi