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HS-4424EH - Non-Inverting Power MOSFET Drivers

Download the HS-4424EH datasheet PDF. This datasheet also covers the HS-4424RH variant, as both devices belong to the same non-inverting power mosfet drivers family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Electrically screened to DESC SMD # 5962-99560.
  • QML qualified per MIL-PRF-38535 requirements.
  • Radiation environment ○ High dose rate (50-300rad(Si)/s): 300krad(Si) ○ Latch-up immune ○ Low dose rate (0.01rad(Si)/s): 50krad(Si) (EH products only).
  • IPEAK: >2A (min).
  • Matched rise and fall times (CL = 4300pF): 75ns (maximum).
  • Low voltage lockout feature ○ HS-4424RH, HS-4424EH:.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HS-4424RH_IntersilCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Datasheet HS-4424RH, HS-4424EH, HS-4424BRH, HS-4424BEH Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers The radiation hardened HS-4424RH, HS-4424EH, HS-4424BRH and HS-4424BEH are non-inverting, dual, monolithic high-speed MOSFET drivers designed to convert TTL level signals into high current outputs at voltages up to 18V. The inputs of these devices are TTL compatible and can be directly driven by our HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS type logic devices. The fast rise times and high current outputs allow very quick control of high gate capacitance power MOSFETs in high frequency applications. The high current outputs minimize power losses in MOSFETs by rapidly charging and discharging the gate capacitance.