ICL71C03 Datasheet | Intersil

BTA312-800CT 4 October 2012 3Q Hi- Triac Product data sheet 1. Product profile 1.1 General description Planar passivated high mutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic d V/dt and high d I/dt can occur. This "series CT" triac will mutate the full RMS current at the maximum rated junction temperature (Tj = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 1.2 Features and benefits - 3Q technology for improved noise immunity - High mutation capability with maximum false trigger immunity - High immunity to false turn-on by d V/dt - High junction operating temperature capability - High voltage capability - Less sensitve gate for high noise immunity - Planar passivated for voltage ruggedness and reliability - Triggering in three quadrants only 1.3 Applications - Applications subject to high temperature - Electronic thermostats (heating and cooling) - High power motor controls e.g. washing machines and vacuum cleaners - Rectifier-fed DC inductive loads e.g. DC motors and solenoids 1.4 Quick reference data Table 1. Symbol VDRM ITSM Tj IT(RMS) Quick reference data Parameter repetitive peak offstate voltage non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 junction temperature RMS on-state current full sine wave; Tmb ≤ 125 °C; Fig. 1; Fig. 2; Fig. 3 Conditions Min Typ Max 800 100 150 12 Unit V A °C A Scan or click this QR code to view the latest information for this product Free Datasheet http://.. NXP Semiconductors BTA312-800CT 3Q Hi- Triac Symbol IGT Parameter gate trigger current Conditions VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 Min 2 2...