IS-1845ASEH
feature a single output operating from zero to less than 50% duty cycle.
Constructed with Renesas Rad Hard Silicon Gate (RSG) dielectrically isolated Bi CMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are ensured and tested for 300krad(Si) total dose performance at a high dose rate and 50krad(Si) total dose at a low dose rate.
Detailed Electrical Specifications for these devices are contained in the SMD 5962-01509.
Features
- Electrically Screened to DSCC SMD # 5962-01509
- QML Qualified per MIL-PRF-38535 Requirements
- Radiation acceptance testing
- IS-1845ASRH
- High Dose Rate
- -
- - 300krad(SI) (Max)
- Radiation acceptance testing
- IS-1845ASEH
- High Dose Rate
- -
- - 300krad(SI) (Max)
- Low Dose Rate
- -
- - . . 50krad(SI) (Max)
- SEE hardness...
