ISL73033SLHM Description
Datasheet ISL73033SLHM Radiation Hardened Driver-GaN Power Stage with 100V GaN FET The ISL73033SLHM is a radiation hardened Driver-GaN power stage with a 4.5V gate driver and a 100V, 7.5mΩ enhancement-mode Gallium Nitride (GaN) FET in one package. The device simplifies the PCB layout by integrating a driver plus GaN FET in one package and is designed for isolated topologies and boost type configurations. The driver...
ISL73033SLHM Key Features
- Production testing and qualification follow the standard AS6294/1
- 100V, 7.5mΩ eGaN FET with integrated 4.5V gate driver
- Wide driver bias range of 4.5V to 13.2V
- Up to 16.5V logic inputs (regardless of VDD level)
- Inverting and non-inverting inputs
- Integrated driver optimized for enhancement-mode GaN FETs
- Internal 4.5V regulated gate drive voltage
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C