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MCT3D65P100F2 Datasheet

65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)

No Preview Available !

April 1999
Semiconductor
PROCESS OPABRSTOLWEITTEHD- RNAOWNNEW DESIGNS
MCT3A65P100F2,
MCT3D65P100F2
65A, 1000V, P-Type
MOS-Controlled Thyristor (MCT)
[ /Title
(MCT3
A65P1
00F2,
MCT3
D65P1
00F2)
/Sub-
ject
(65A,
1000V,
P-
Type
MOS-
Con-
trolled
Thyris-
tor
(MCT)
)
/Autho
r ()
/Key-
words
()
/Cre-
ator ()
/DOCI
NFO
pdf-
mark
Features
• 65A, -1000V
• VTM = -1.4V (Max) at I = 65A and 150oC
• 2000A Surge Current Capability
• 2000A/µs di/dt Capability
• MOS Insulated Gate Control
• 100A Gate Turn-Off Capability at 150oC
Part Number Information
PART NUMBER
PACKAGE
BRAND
MCT3A65P100F2
TO-247
M65P100F2
MCT3D65P100F2
MO-093AA
M65P100F2
NOTE: When ordering, use the entire part number.
Packaging
CATHODE
(FLANGE)
JEDEC MO-093AA
ANODE
ANODE
CATHODE
GATE RETURN
GATE
Description
The MCT is an MOS Controlled Thyristor designed for switching
currents on and off by negative and positive pulsed control of an
insulated MOS gate. It is designed for use in motor controls,
inverters, line switches, and other power switching applications.
The MCT is especially suited for resonant (zero voltage or zero
current switching) applications. The SCR like forward drop
greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at junc-
tion temperatures up to 150oC with active switching.
Formerly developmental type TA49226.
Symbols
(ANODE KELVIN)
GATE RETURN
GATE
ANODE
CATHODE
CATHODE (TAB)
ANODE
GATE
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
JEDEC STYLE TO-247
ANODE
ANODE
CATHODE
GATE RETURN
GATE
[
/Page-
Mode
/Use-
Out-
lines
/DOC-
VIEW
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1999
1
File Number 4454.2


Intersil Electronic Components Datasheet

MCT3D65P100F2 Datasheet

65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)

No Preview Available !

MCT3A65P100F2, MCT3D65P100F2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Peak Off-State Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM
Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Continuous Cathode Current
At TC = 25oC (Package Limited). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK110
Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IKSM
Peak Controllable Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IKC
Gate to Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGA
Gate to Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGA
Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt
Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
MCT3A65P100F2
MCT3D65P100F2
-1000
5
85
65
2000
100
±15
±20
Figure 11
2000
290
2.32
-55 to 150
300
UNITS
V
V
A
A
A
A
V
V
A/µs
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Maximum Pulse Width of 200µs (Half Sine). Assume TJ(Initial) = 90oC and TJ(Final) = TJ(Max) = 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Peak Off-State Blocking Current
Peak Reverse Blocking Current
On-State Voltage
IDRM
IRRM
VTM
VKA = -1000V
VGA = 15V
VK = 5V
VGA = 15V
IK = IK110
VGA = -10V
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
- - 3 mA
- - 100 µA
- - 4 mA
- - 100 µA
- 1.25 1.4
V
- 1.35 1.5
V
Gate to Anode Leakage Current
IGAS
VGA = ±20V
- - 200 nA
Input Capacitance
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
CISS
td(ON)I
trI
td(OFF)I
tfI
EON
VGA = 15V, VKA = -20V, f = 1MHz
TC = 150oC
L = 200µH
IK = IK110 = 65A
VKA = -400V
VGA = 15V/-10V
RG = 2.2
Test Circuit (Figure 13)
- 12 -
nF
- 125
-
ns
- 70 -
ns
- 770
-
ns
- 1000 1400 ns
- 2.8 -
mJ
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
EOFF
RθJC
- 15 - mJ
-
-
0.43
oC/W
NOTE:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the cathode current equals zero (IK = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses
include losses due to diode recovery.
2


Part Number MCT3D65P100F2
Description 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
Maker Intersil
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