MCT3D65P100F2 (mct) equivalent, 65a / 1000v / p-type mos-controlled thyristor (mct).
* 65A, -1000V
* VTM = -1.4V (Max) at I = 65A and 150oC
* 2000A Surge Current Capability
* 2000A/µs di/dt Capability
* MOS Insulated Gate Control
*.
The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward d.
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