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MCT3D65P100F2 - 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)

General Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate.

It is designed for use in motor controls, inverters, line switches, and other power switching applications.

Key Features

  • 65A, -1000V.
  • VTM = -1.4V (Max) at I = 65A and 150oC.
  • 2000A Surge Current Capability.
  • 2000A/µs di/dt Capability.
  • MOS Insulated Gate Control.
  • 100A Gate Turn-Off Capability at 150oC.

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MCT3A65P100F2 65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor April 1999 PRO CE IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O MCT3A65P100F2, MCT3D65P100F2 65A, 1000V, P-Type MOS-Controlled Thyristor (MCT) [ /Title (MCT3 A65P1 00F2, MCT3 D65P1 00F2) /Subject (65A, 1000V, PType MOSControlled Thyristor (MCT) ) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW Features • 65A, -1000V • VTM = -1.4V (Max) at I = 65A and 150oC • 2000A Surge Current Capability • 2000A/µs di/dt Capability • MOS Insulated Gate Control • 100A Gate Turn-Off Capability at 150oC Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate.