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MCTA75P60E1 Datasheet

75A / 600V P-Type MOS Controlled Thyristor (MCT)

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MCTV75P60E1,
Semiconductor
April 1999
MCTA75P60E1PROCESS
OPABRSTOLWEITTEHD- RNAOWNNEW
DESIGNS
P-Type
MOS
Controlled
75A, 600V
Thyristor (MCT)
Features
• 75A, -600V
• VTM = -1.3V(Maximum) at I = 75A and +150oC
• 2000A Surge Current Capability
• 2000A/µs di/dt Capability
• MOS Insulated Gate Control
• 120A Gate Turn-Off Capability at +150oC
Package
JEDEC STYLE TO-247 5-LEAD
ANODE
ANODE
CATHODE
GATE RETURN
GATE
Description
The MCT is an MOS Controlled Thyristor designed for switching
currents on and off by negative and positive pulsed control of an
insulated MOS gate. It is designed for use in motor controls,
inverters, line switches and other power switching applications.
JEDEC MO-093AA (5-LEAD TO-218)
ANODE
ANODE
CATHODE
GATE RETURN
GATE
The MCT is especially suited for resonant (zero voltage or
zero current switching) applications. The SCR like forward
drop greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150oC with active switching.
PART NUMBER INFORMATION
Symbol
GA
PART NUMBER
PACKAGE
BRAND
MCTV75P60E1
TO-247
MV75P60E1
MCTA75P60E1
MO-093AA
MA75P60E1
NOTE: When ordering, use the entire part number.
K
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
MCTV75P60E1
MCTA75P60E1
Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM
Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Continuous Cathode Current (See Figure 2)
TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK25
TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK90
Non-Repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IKSM
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IKC
Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGA
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGAM
Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt
-600
+5
85
75
2000
120
±20
±25
See Figure 11
Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt
2000
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
208
1.67
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.063" (1.6mm) from case for 10s)
-55 to +150
260
NOTE:
1. Maximum Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC
UNITS
V
V
A
A
A
A
V
V
A/µs
W
W/oC
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1999
2-18
File Number 3374.6


Intersil Electronic Components Datasheet

MCTA75P60E1 Datasheet

75A / 600V P-Type MOS Controlled Thyristor (MCT)

No Preview Available !

Specifications MCTV75P60E1, MCTA75P60E1
Electrical Specifications TC = +25oC Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Peak Off-State
Blocking Current
Peak Reverse
Blocking Current
On-State Voltage
IDRM
IRRM
VTM
VKA = -600V,
VGA = +18V
VKA = +5V
VGA = +18V
IK = IK90,
VGA = -10V
TC = +150oC
TC = +25oC
TC = +150oC
TC = +25oC
TC = +150oC
TC = +25oC
Gate-Anode
Leakage Current
IGAS
VGA = ±20V
Input Capacitance
CISS
VKA = -20V, TJ = +25oC
VGA = +18V
Current Turn-On
Delay Time
Current Rise Time
tD(ON)I
tRI
L = 200µH, IK = IK90
RG = 1, VGA = +18V, -7V
TJ = +125oC
VKA = -300V
Current Turn-Off
Delay Time
tD(OFF)I
Current Fall Time
Turn-Off Energy
Thermal Resistance
tFI
EOFF
RθJC
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
10
300
200
700
1.15
10
.5
Typical Performance Curves
MAX
3
100
4
100
1.3
1.4
200
UNITS
mA
µA
mA
µA
V
V
nA
- nF
- ns
- ns
- ns
1.4 µs
- mJ
.6 oC/W
300
PULSE TEST
PULSE DURATION - 250µs
100 DUTY CYCLE < 2%
TJ = +150oC
10 TJ = +25oC
TJ = -40oC
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VTM, CATHODE VOLTAGE (V)
FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE
(TYPICAL)
120
110
100
90 PACKAGE LIMIT
80
70
60
50
40
30
20
10
0
25 35 45 55 65 75 85 95 105 115 125 135 145 155
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT
2-19


Part Number MCTA75P60E1
Description 75A / 600V P-Type MOS Controlled Thyristor (MCT)
Maker Intersil
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