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MCTV35P60F1D - 35A / 600V P-Type MOS Controlled Thyristor

Datasheet Summary

Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate.

It is designed for use in motor controls, inverters, line switches and other power switching applications.

Features

  • 35A, -600V.
  • VTM = -1.35V (Max) at I = 35A and +150oC.
  • 800A Surge Current Capability.
  • 800A/µs di/dt Capability.
  • MOS Insulated Gate Control.
  • 50A Gate Turn-Off Capability at +150oC.
  • Anti-Parallel Diode A A K GR G.

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Datasheet Details

Part number MCTV35P60F1D
Manufacturer Intersil
File Size 53.90 KB
Description 35A / 600V P-Type MOS Controlled Thyristor
Datasheet download datasheet MCTV35P60F1D Datasheet
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Full PDF Text Transcription

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Semiconductor MCTV35P60F1D P-Type MOS Controlled with Anti-Parallel Diode Package JEDEC STYLE TO-247 April 1999 PROCE S AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor (MCT) OLET S OBS Features • 35A, -600V • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability • 800A/µs di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150oC • Anti-Parallel Diode A A K GR G Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications.
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