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MCTV35P60F1D Datasheet

35A / 600V P-Type MOS Controlled Thyristor

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Semiconductor
MCTV35P60F1D
April 1999
PROCESS
OPBASROTLWEITTEHD- NROAWNNEW
DESIGNS
35A, 600V
Thyristor (MCT)
P-Type MOS Controlled
with Anti-Parallel Diode
Features
Package
• 35A, -600V
• VTM = -1.35V (Max) at I = 35A and +150oC
• 800A Surge Current Capability
• 800A/µs di/dt Capability
• MOS Insulated Gate Control
• 50A Gate Turn-Off Capability at +150oC
• Anti-Parallel Diode
JEDEC STYLE TO-247
A
AK
GR
G
Description
The MCT is an MOS Controlled Thyristor designed for switch-
ing currents on and off by negative and positive pulsed control
of an insulated MOS gate. It is designed for use in motor con-
trols, inverters, line switches and other power switching appli-
cations. The MCT is especially suited for resonant (zero
voltage or zero current switching) applications. The SCR like
forward drop greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150oC with active switching.
This device features a discrete anti-parallel diode that shunts
current around the MCT in the reverse direction without
introducing carriers into the depletion region.
PART NUMBER INFORMATION
PART NUMBER
PACKAGE
BRAND
MCTV35P60F1D TO-247
M35P60F1D
NOTE: When ordering, use the entire part number.
Formerly developmental type TA9789 (MCT) and TA49054
(diode).
Symbol
GA
K
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
MCTV35P60F1D
Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM
Continuous Cathode Current (See Figure 2)
TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK25
TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK115
Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IKSM
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IKC
Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGA1
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGAM
Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt
-600
60
35
800
50
±20
±25
See Figure 11
Rate of Change of Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .di/dt
800
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
178
1.43
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to +150
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.063" (1.6mm) from case for 10s)
260
NOTE: 1. Maximum Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC
UNITS
V
A
A
A
A
V
V
A/µs
W
W/oC
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1999
2-8
File Number 3694.4


Intersil Electronic Components Datasheet

MCTV35P60F1D Datasheet

35A / 600V P-Type MOS Controlled Thyristor

No Preview Available !

Specifications MCTV35P60F1D
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Peak Off-State
Blocking Current
On-State Voltage
IDRM
VTM
VKA = -600V
VGA = +18V
IK = IK115
VGA = -7V
TC = +150oC
TC = +25oC
TC = +150oC
TC = +25oC
Gate-Anode
Leakage Current
IGAS
VGA = ±20V
Input Capacitance
CISS
VKA = -20V, TJ = +25oC
VGA = +18V
Current Turn-On
Delay Time
Current Rise Time
tD(ON)I
tRI
L = 200µH, IK = IK115
RG = 1, VGA = +18V, -7V
TJ = +125oC
VKA = -300V
Current Turn-Off Delay Time
tD(OFF)I
Current Fall Time
tFI
Turn-Off Energy
EOFF
Thermal Resistance (MCT)
RθJC
Thermal Resistance (Diode)
Diode Forward Voltage
RθJC
VKA
IKA = 35A
Diode Reverse Recovery Time tRR IKA = 35A, di/dt = 100A/µs
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP MAX UNITS
- 5 mA
- 200 µA
- 1.35 V
- 1.4 V
- 100 nA
5 - nF
140 -
ns
180 -
ns
640 -
ns
1.1 1.4
µs
5.6 - mJ
.6 .7 oC/W
1.1 1.2 oC/W
- 1.4 V
- 600 ns
Typical Performance Curves
100
PULSE TEST
50 PULSE DURATION = 250µs
DUTY CYCLE < 2%
30
20
10 TJ = +150oC
5
3
2
TJ = -40oC
TJ = +25oC
1
0 0.5 1.0 1.5 2.0
VTM, CATHODE VOLTAGE (V)
TJ = +150oC
100
80
PACKAGE LIMIT
60
MCT SWITCHING LIMIT
40 MCT
DIODE
20
0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (oC)
FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE
(TYPICAL)
FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT
2-9


Part Number MCTV35P60F1D
Description 35A / 600V P-Type MOS Controlled Thyristor
Maker Intersil
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