MCTV35P60F1D 35A / 600V P-Type MOS Controlled Thyristor

Intersil

MCTV35P60F1D Description

Semiconductor MCTV35P60F1D P-Type MOS Controlled with Anti-Parallel Diode Package JEDEC STYLE TO-247 April 1999 PROCE S AWN NS 35A, 600V ITHDR DE.
The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate.

MCTV35P60F1D Features

* 35A, -600V
* VTM = -1.35V (Max) at I = 35A and +150oC
* 800A Surge Current Capability
* 800A/µs di/dt Capability
* MOS Insulated Gate Control
* 50A Gate Turn-Off Capability at +150oC

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Datasheet Details

Part number: MCTV35P60F1D
Manufacturer: Intersil
File Size: 53.90 KB
Datasheet: MCTV35P60F1D_IntersilCorporation.pdf
Description: 35A / 600V P-Type MOS Controlled Thyristor

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35A 600V P-Type MOS Controlled Thyristor Intersil

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