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MCTV65P100F1 Datasheet

65A / 1000V P-Type MOS Controlled Thyristor

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MCTV65P100F1,
Semiconductor
April 1999
MCTA65P100F1PROCESS
OPABRSTOLWEITTEHD- RNAOWNNEW
DESIGNS
P-Type
MOS
Controlled
65A,
Thyristor
1000V
(MCT)
Features
• 65A, -1000V
• VTM -1.4V at I = 65A and +150oC
• 2000A Surge Current Capability
• 2000A/µs di/dt Capability
• MOS Insulated Gate Control
• 100A Gate Turn-Off Capability at +150oC
Package
JEDEC STYLE TO-247
CATHODE (FLANGE)
ANODE ANODE
CATHODE
GATE RETURN
GATE
Description
The MCT is an MOS Controlled Thyristor designed for switching
currents on and off by negative and positive voltage control of an
insulated MOS gate. It is designed for use in motor controls,
inverters, line switches and other power switching applications.
JEDEC MO-093AA (5-LEAD TO-218)
ANODE ANODE
CATHODE
GATE RETURN
GATE
The MCT is especially suited for resonant (zero voltage or zero
current switching) applications. The SCR like forward drop
greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at junc-
tion temperatures up to +150oC with active switching.
PART NUMBER INFORMATION
Symbol
CATHODE (FLANGE)
GA
PART NUMBER
PACKAGE
BRAND
MCTV65P100F1 TO-247
M65P100F1
MCTA65P100F1 MO-093AA
M65P100F1
NOTE: When ordering, use the entire part number.
K
Formerly TA9900.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
MCTV65P100F1
MCTA65P100F1
Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM
Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Continuous Cathode Current (See Figure 2)
TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK25
TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IK90
Non-Repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ITSM
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ITC
Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGA
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGA
Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt
-1000
+5
85
65
2000
100
±20
±25
See Figure 11
Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt
2000
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
208
1.67
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.063" (1.6mm) from case for 10s)
-55 to +150
260
NOTE:
1. Maximum Pulse Width of 200µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC
UNITS
V
V
A
A
A
A
V
V
A/µs
W
W/oC
oC
oC
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1999
2-13
File Number 3516.5


Intersil Electronic Components Datasheet

MCTV65P100F1 Datasheet

65A / 1000V P-Type MOS Controlled Thyristor

No Preview Available !

Specifications MCTV65P100F1, MCTA65P100F1
Electrical Specifications TC = +25oC Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Peak Off-State
Blocking Current
Peak Reverse
Blocking Current
On-State Voltage
IDRM
VKA = -1000V,
VGA = +18V
IRRM
VKA = +5V,
VGA = +18V
VTM
IK = IK90,
VGA = -10V
TC = +150oC
TC = +25oC
TC = +150oC
TC = +25oC
TC = +150oC
TC = +25oC
Gate-Anode
Leakage Current
IGAS
VGA = ±20V
Input Capacitance
CISS
VKA = -20V, TJ = +25oC
VGA = +18V
Current Turn-On
Delay Time
Current Rise Time
tD(ON)I
tRI
L = 200µH, IK = IK90 = 65A
RG = 1, VGA = +18V, -7V
TJ = +125oC
VKA = -400V
Current Turn-Off
Delay Time
tD(OFF)I
Current Fall Time
Turn-Off Energy
Thermal Resistance
tFI
EOFF
RθJC
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
10
120
160
750
1.45
18
0.5
Typical Performance Curves
MAX
3
100
4
100
1.4
1.5
200
UNITS
mA
µA
mA
µA
V
V
nA
- nF
- ns
- ns
- ns
1.9 µs
- mJ
0.6 oC/W
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE < 2%
100
TJ = +150oC
10
TJ = +25oC
TJ = -40oC
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VTM, CATHODE VOLTAGE (V)
FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE
(TYPICAL)
100
90 PACKAGE LIMIT
80
70
60
50
40
30
20
10
0
20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT
2-14


Part Number MCTV65P100F1
Description 65A / 1000V P-Type MOS Controlled Thyristor
Maker Intersil
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