BUZ20
Key Features
- 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 0.200Ω (BUZ20 field effect transistor designed for applications such as
- Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (12A
- Linear Transfer Characteristics This type can be operated directly from integrated circuits. 100V
- High Input Impedance 0.200 Formerly developmental type TA17411
- Majority Carrier Device Ohm, N
