BUZ41A
Key Features
- 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power
- rDS(ON) = 1.500Ω (BUZ41 field effect transistor designed for applications such as
- SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub
- Linear Transfer Characteristics (4.5A, This type can be operated directly from integrated circuits
- High Input Impedance 500V, Formerly developmental type TA17415
- Majority Carrier Device 1.500 - Related Literature Ohm
