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Intersil Electronic Components Datasheet

BUZ41A Datasheet

N-Channel Power MOSFET

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Semiconductor
Data Sheet
BUZ41A
October 1998 File Number 2256.1
4.5A, 500V, 1.500 Ohm, N-Channel Power
Features
[ /Title
(BUZ41
A)
/Sub-
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
• 4.5A, 500V
• rDS(ON) = 1.500
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
ject
(4.5A,
500V,
1.500
Ohm,
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17415.
Ordering Information
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
N-Chan- PART NUMBER
PACKAGE
nel BUZ41A
TO-220AB
BRAND
BUZ41A
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Power NOTE: When ordering, use the entire part number.
Symbol
MOS-
FET)
D
/Author
() G
/Key-
words
S
(Harris
Semi-
conduc- Packaging
tor, N-
Chan-
JEDEC TO-220AB
nel
Power
MOS-
FET,
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
TO-
220AB)
/Cre-
ator ()
/DOCIN
FO pdf-
mark
[ /Page-
Mode
/Use-
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1998


Intersil Electronic Components Datasheet

BUZ41A Datasheet

N-Channel Power MOSFET

No Preview Available !

BUZ41A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ20
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current TC = 35oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500
500
4.5
18
±20
75
0.6
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
BVDSS
VGS(TH)
IDSS
ID = 250µA, VGS = 0V
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 500V, VGS = 0V
TJ = 125oC, VDS = 500V, VGS = 0V
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
tf
VDS = 0V, VGS = 20V
ID = 2.5A, VGS = 10V (Figure 8)
VDS = 25V, ID = 2.5A (Figure 11)
VCC = 30V, ID 2.6A, VGS = 10V, RGS = 50Ω, RL
= 10. (Figures 14, 15)
Input Capacitance
Output Capacitance
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz (Figure 10)
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CRSS
RθJC
RθJA
Source to Drain Diode Specifications
MIN
500
2.1
-
-
-
-
1.5
-
-
-
-
-
-
-
TYP
-
3
20
100
10
1.4
2.5
30
40
110
50
1500
110
40
1.67
75
MAX
-
4
250
1000
100
1.5
-
45
60
140
65
2000
170
70
UNITS
V
V
µA
µA
nA
S
ns
ns
ns
ns
pF
pF
pF
oC/W
oC/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD TC = 25oC
- - 4.5
ISDM
TC = 25oC
- - 18
VSD
TJ = 25oC, ISD = 9A, VGS = 0V
- 1.1 1.5
trr TJ = 25oC, ISD = 4.5A, dISD/dt = 100A/µs, - 1200 -
QRR
VR = 100V
-6-
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
2


Part Number BUZ41A
Description N-Channel Power MOSFET
Maker Intersil Corporation
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BUZ41A Datasheet PDF






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