BUZ41A Datasheet | Intersil

Features - 4.5A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power - r DS(ON) = 1.500Ω (BUZ41 field effect transistor designed for applications such as - SOA is Power Dissipation Limited A) switching regulators, switching converters, motor drivers, /Sub- Nanosecond Switching Speeds relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject - Linear Transfer Characteristics (4.5A, This type can be operated directly from integrated circuits. - High Input Impedance 500V, Formerly developmental type TA17415. - Majority Carrier Device 1.500 Ordering Information - Related Literature Ohm, - TB334 “Guidelines for Soldering Surface Mount PACKAGE BRAND N-Chan- PART NUMBER ponents to PC Boards” BUZ41A TO-220AB BUZ41A nel Power NOTE: When ordering, use the entire part number. Symbol MOSD FET) /Author G () /Key S words (Harris Semiconduc- Packaging tor, NJEDEC TO-220AB Chan SOURCE nel DRAIN Power GATE MOSDRAIN (FLANGE) FET, TO220AB) /Creator () /DOCIN FO pdfmark [ /Page Mode /Use- CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 Absolute Maximum Ratings TC = 25o C, Unless Otherwise Specified BUZ20 500 500 4.5 18 ±20 75 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W W/o C o C Drain to Source Breakdown Voltage (Note 1) - - - - - - - . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) - - - - - - - VDGR Continuous Drain Current TC = 35o C- - - - - - - - . . . ID Pulsed Drain Current (Note 3) - - - - - - - - - . . . . IDM Gate to Source Voltage - - - - - - - - - . . . ....