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Intersil Electronic Components Datasheet

BUZ71 Datasheet

N-Channel Power MOSFET

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Data Sheet
BUZ71
June 1999
File Number 2418.2
14A, 50V, 0.100 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA9770.
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ71
TO-220AB
BUZ71
NOTE: When ordering, use the entire part number.
Features
• 14A, 50V
• rDS(ON) = 0.100
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
11 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

BUZ71 Datasheet

N-Channel Power MOSFET

No Preview Available !

BUZ71
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ71
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50 V
50 V
14 A
56 A
±20 V
40 W
0.32
W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
-55 to 150
E
mJ
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
BVDSS ID = 250µA, VGS = 0V
VGS(TH)
IDSS
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 50V, VGS = 0V
TJ = 125oC, VDS = 50V, VGS = 0V
IGSS
rDS(ON)
gfs
td(ON)
tr
td(OFF)
VGS = 20V, VDS = 0V
ID = 9A, VGS = 10V (Figure 8)
VDS = 25V, ID = 9A (Figure 11)
VCC = 30V, ID 3A, VGS = 10V, RGS = 50Ω,
RL = 10
tf
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 10)
CRSS
RθJC
RθJA
MIN TYP MAX UNITS
50 - - V
2.1 3
4
V
- 20 250 µA
- 100 1000 µA
- 10 100 nA
- 0.09 0.1
3.0 5.2
-
S
- 20 30
ns
- 55 85
ns
- 70 90
ns
- 80 110 ns
- 480 650 pF
- 280 450 pF
- 160 280 pF
3.1
oC/W
75
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD
ISDM
VSD
trr
QRR
TC = 25oC
TC = 25oC
TJ = 25oC, ISD = 28A, VGS = 0V, (Figure 12)
TJ = 25oC, ISD = 14A, dISD/dt = 100A/µs,
VR = 30V
- - 14
- - 56
- 1.6 1.8
- 120
-
- 0.15
-
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 10V, starting TJ = 25oC, L = 820µH, IPEAK = 14A. (See Figures 14 and 15).
UNITS
A
A
V
ns
µC
12


Part Number BUZ71
Description N-Channel Power MOSFET
Maker Intersil Corporation
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BUZ71 Datasheet PDF






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