Datasheet4U Logo Datasheet4U.com

BUZ72A - N-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 9A, 100V.
  • rDS(ON) = 0.250Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER BUZ72A.

📥 Download Datasheet

Full PDF Text Transcription for BUZ72A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BUZ72A. For precise diagrams, and layout, please refer to the original PDF.

BUZ72A Data Sheet June 1999 File Number 2262.2 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor...

View more extracted text
n N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Formerly developmental type TA17401. Features • 9A, 100V • rDS(ON) = 0.