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Intersil Electronic Components Datasheet

BUZ72A Datasheet

N-Channel Power MOSFET

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Data Sheet
BUZ72A
June 1999
File Number 2262.2
9A, 100V, 0.250 Ohm, N-Channel Power
MOSFET
This is an N-Channel enhancement mode silicon gate power
field effect transistor designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.
Formerly developmental type TA17401.
Ordering Information
PART NUMBER
PACKAGE
BRAND
BUZ72A
TO-220AB
BUZ72A
NOTE: When ordering, use the entire part number.
Features
• 9A, 100V
• rDS(ON) = 0.250
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
4-23
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999


Intersil Electronic Components Datasheet

BUZ72A Datasheet

N-Channel Power MOSFET

No Preview Available !

BUZ72A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
BUZ72A
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
100
9
36
±20
40
0.32
-55 to 150
E
V
V
A
A
V
W
W/oC
oC
IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55/150/56
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BVDSS ID = 250µA, VGS = 0V
100 - - V
VGS(TH)
IDSS
VGS = VDS, ID = 1mA (Figure 9)
TJ = 25oC, VDS = 100V, VGS = 0V
TJ = 125oC, VDS = 100V, VGS = 0V
2.1 3
4
- 20 250
- 100 1000
V
µA
µA
IGSS VGS = 20V, VDS = 0V
- 10 100 nA
rDS(ON) ID = 5A, VGS = 10V (Figure 8)
- 0.23 0.250
gfs VDS = 25V, ID = 5A (Figure 11)
2.7 3.8
-
S
td(ON) VCC = 30V, ID 2.9A, VGS = 10V, RGS = 50Ω,
-
20
30
ns
tr RL = 10
- 45 70
ns
td(OFF)
- 70 90
ns
tf
- 55 70
ns
CISS
COSS
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 10)
- 450 600
- 150 240
pF
pF
CRSS
RθJC
RθJA
- 80 130 pF
3.1
oC/W
75 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Continuous Source to Drain Current
ISD TC = 25oC
--
9
Pulsed Source to Drain Current
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISDM
VSD
trr
QRR
TJ = 25oC, ISD = 18A, VGS = 0V, (Figure 12)
TJ = 25oC, ISD = 9A, dISD/dt = 100A/µs,
VR = 30V
- - 36
- 1.5
2
- 170
-
- 0.30
-
NOTES:
2. Pulse Test: Pulse width 300µs, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
A
A
V
ns
µC
4-24


Part Number BUZ72A
Description N-Channel Power MOSFET
Maker Intersil Corporation
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BUZ72A Datasheet PDF






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