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CD4023BMS Datasheet CMOS NAND Gates

Manufacturer: Intersil (now Renesas)

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General Description

of “B” Series CMOS Device’s J = ABCD 1 A 2 B 3 CD4012BMS TOP VIEW 14 VDD 13 K = EFGH 12 H 11 G 10 F 9 E 8 NC NC = NO CONNECTION Description CD4011BMS - Quad 2 Input CD4012BMS - Dual 4 Input CD4023BMS - Triple 3 Input CD4011BMS, CD4012BMS, and CD4023BMS NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of CMOS gates.

All inputs and outputs are buffered.

The CD4011BMS, CD4012BMS and the CD4023BMS is supplied in these 14 lead outline packages: CD4011B CD4012B H4H H1B H3W CD4023B H4Q H1B H3W C 4 D 5 NC 6 VSS 7 CD4023BMS TOP VIEW A 1 B 2 D 3 E 4 F 5 K = DEF 6 VSS 7 14 VDD 13 G 12 H 11 I 10 L = GHI 9 J = ABC 8 C Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4Q H1B H3W CAUTION: These devices are sensitive to electrostatic discharge;

Overview

CD4011BMS, CD4012BMS CD4023BMS November 1994 CMOS NAND Gates Pinouts CD4011BMS TOP.

Key Features

  • High-Voltage Types (20V Rating).
  • Propagation Delay Time = 60ns (typ. ) at CL = 50pF, VDD = 10V.
  • Buffered Inputs and Outputs.
  • Standardized Symmetrical Output Characteristics.
  • Maximum Input Current of 1µA at 18V Over Full PackageTemperature Range; 100nA at 18V and +25oC.
  • 100% Tested for Maximum Quiescent Current at 20V.
  • 5V, 10V and 15V Parametric Ratings A 1 B 2 J = AB 3 K = CD 4 C 5 D 6 VSS 7 14 VDD 13 H 12 G 11 M = GH 10 L = EF 9 E.

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