* ON-Resistance (Max). . . . . . . . . . . . . . . . . . . . . . . . . 35
* Low Power Consumption (PD) . . . . . . . . . . . . . . . . . . <35µW
* Fast Switc.

The improvements in the DG411 series are made possible by using a high voltage silicon-gate process. An epitaxial layer.

PIN SYMBOL DESCRIPTION 1 IN1 Logic Control for Switch 1. 2 D1 Drain (Output) Terminal for Switch 1. 3 S1 Source (Input) Terminal for Switch 1. 4 V- Negative Power Supply Terminal. 5 GND Ground Terminal (Logic Common). 6 S4 Source .

DG4102

DG411

DG411F

DG411HS

DG411L

DG411LE

DG412

DG412F

DG412HS

DG412L

DG412LE

DG413F

DG413HS