Datasheet4U Logo Datasheet4U.com

G20N100D2 HGTG20N100D2

G20N100D2 Description

HGTG20N100D2 May 1995 20A, 1000V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE .
The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

G20N100D2 Features

* 34A, 1000V
* Latch Free Operation
* Typical Fall Time 520ns
* High Input Impedance

G20N100D2 Applications

* operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG20N100D2 PACKAGE TO-247 BRAND G20N100D2 COLLECTOR (BOTTOM SIDE METAL) Terminal Diagram N-CH

📥 Download Datasheet

Preview of G20N100D2 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • G20N120 - HGTG20N120 (ETC)
  • G20N50C - Power MOSFET (Vishay)
  • G20N60B3D - 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode (Fairchild)
  • G20N60C3 - N-Channel IGBT (Fairchild Semiconductor)
  • G20N60HS - High Speed IGBT (Infineon)
  • G20-40i - Rectifier (AEG)
  • G200 - Axial Vitreous Leaded Wirewound Resistors (Vishay)
  • G2000HF250 - Anode Shorted Gate Turn-Off Thyristor (IXYS)

📌 All Tags

Intersil Corporation G20N100D2-like datasheet