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HM1-6551883 - 256 x 4 CMOS RAM

General Description

The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology.

Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Key Features

  • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
  • Low Power Standby.
  • 50µW Max.
  • Low Power Operation.
  • . . . 20mW/MHz Max.
  • Fast Access Time.
  • . . 220ns Max.
  • Data Retention.
  • . . . . at 2.0V Min.
  • TTL Compatible Input/Output.
  • High Output Drive - 1 TTL L.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM-6551/883 March 1997 256 x 4 CMOS RAM Description The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. The HM-6551/883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature. Features • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.