HM3-6514-9 Overview
Description
The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation.
Key Features
- Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max
- Low Power Operation . . . . . . . . . . . . . 35mW/MHz Max
- Data Retention . . . . . . . . . . . . . . . . . . . . . . . at 2.0V Min
- TTL Compatible Input/Output
- Common Data Input/Output
- Three-State Output
- Standard JEDEC Pinout
- Fast Access Time. . . . . . . . . . . . . . . . . . 120/200ns Max
- 18 Pin Package for High Density
- On-Chip Address Register
